JPS5544779A - Producing method for mos semiconductor device - Google Patents
Producing method for mos semiconductor deviceInfo
- Publication number
- JPS5544779A JPS5544779A JP11894678A JP11894678A JPS5544779A JP S5544779 A JPS5544779 A JP S5544779A JP 11894678 A JP11894678 A JP 11894678A JP 11894678 A JP11894678 A JP 11894678A JP S5544779 A JPS5544779 A JP S5544779A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- multicrystal
- sio
- mask
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11894678A JPS5544779A (en) | 1978-09-27 | 1978-09-27 | Producing method for mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11894678A JPS5544779A (en) | 1978-09-27 | 1978-09-27 | Producing method for mos semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5544779A true JPS5544779A (en) | 1980-03-29 |
| JPS6145867B2 JPS6145867B2 (enrdf_load_stackoverflow) | 1986-10-09 |
Family
ID=14749153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11894678A Granted JPS5544779A (en) | 1978-09-27 | 1978-09-27 | Producing method for mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5544779A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587867A (ja) * | 1981-07-07 | 1983-01-17 | Nec Corp | 半導体装置の製造方法 |
-
1978
- 1978-09-27 JP JP11894678A patent/JPS5544779A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587867A (ja) * | 1981-07-07 | 1983-01-17 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6145867B2 (enrdf_load_stackoverflow) | 1986-10-09 |
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