JPS5543870A - Pattern drawing by electron beam - Google Patents
Pattern drawing by electron beamInfo
- Publication number
- JPS5543870A JPS5543870A JP11694178A JP11694178A JPS5543870A JP S5543870 A JPS5543870 A JP S5543870A JP 11694178 A JP11694178 A JP 11694178A JP 11694178 A JP11694178 A JP 11694178A JP S5543870 A JPS5543870 A JP S5543870A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- stage
- movement
- scans
- scan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11694178A JPS5543870A (en) | 1978-09-22 | 1978-09-22 | Pattern drawing by electron beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11694178A JPS5543870A (en) | 1978-09-22 | 1978-09-22 | Pattern drawing by electron beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5543870A true JPS5543870A (en) | 1980-03-27 |
Family
ID=14699494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11694178A Pending JPS5543870A (en) | 1978-09-22 | 1978-09-22 | Pattern drawing by electron beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543870A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847183A (en) * | 1987-09-09 | 1989-07-11 | Hewlett-Packard Company | High contrast optical marking method for polished surfaces |
-
1978
- 1978-09-22 JP JP11694178A patent/JPS5543870A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847183A (en) * | 1987-09-09 | 1989-07-11 | Hewlett-Packard Company | High contrast optical marking method for polished surfaces |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4151422A (en) | Electron beam exposure method | |
US4199689A (en) | Electron beam exposing method and electron beam apparatus | |
JPS63114125A (ja) | 荷電ビ−ム露光装置 | |
US3797935A (en) | Systems for writing patterns on photosensitive substrates | |
SE7514083L (sv) | Anordning for programmerad uppritning av monster pa ett substrat | |
GB1567187A (en) | Particle projection method and apparatus | |
EP0367126A3 (en) | Charged particle beam exposure method using a mask | |
US3724347A (en) | Apparatus for selectively exposing a photosensitive surface | |
JPS52143776A (en) | Electron beam exposure apparatus | |
JPS5543870A (en) | Pattern drawing by electron beam | |
JPS5489579A (en) | Electron ray exposure system | |
JPS5469075A (en) | Electron beam drawing device | |
JPS5694740A (en) | Electronic beam exposure device | |
GB1202617A (en) | Improvements in or relating to scanning devices for exposing photosensitive surfaces | |
JPH0697648B2 (ja) | 電子ビーム露光装置 | |
JPS5587433A (en) | Electron beam exposure device | |
JPS6229893B2 (ja) | ||
JP3104814B2 (ja) | 荷電粒子線描画装置 | |
JPS62149126A (ja) | 荷電ビ−ム露光方法 | |
US7105844B2 (en) | Method for eliminating low frequency error sources to critical dimension uniformity in shaped beam writing systems | |
JPS58125828A (ja) | 電子ビ−ム露光装置 | |
JPH0466321B2 (ja) | ||
JPS6257216A (ja) | 電子線描画装置 | |
JPS5455381A (en) | Electron beam lithographic apparatus | |
JPS58165325A (ja) | 電子線露光方法 |