JPS5587433A - Electron beam exposure device - Google Patents
Electron beam exposure deviceInfo
- Publication number
- JPS5587433A JPS5587433A JP16315278A JP16315278A JPS5587433A JP S5587433 A JPS5587433 A JP S5587433A JP 16315278 A JP16315278 A JP 16315278A JP 16315278 A JP16315278 A JP 16315278A JP S5587433 A JPS5587433 A JP S5587433A
- Authority
- JP
- Japan
- Prior art keywords
- aperture
- edges
- deflector
- sample
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To project on a sample a rectangular beam image having a most adequately adjusted current density, by arbitrarily changing a spot size of beam with a zoom lens mechanism when forming a cross-over image with beam shaping apertures. CONSTITUTION:A deflector 4 is disposed between an electron gun 1 and an exposure sample 13 via a zoom lens mechanism 3 consisting of electron lenses 2a-2c. A lens 7 is disposed under the deflector 4 via a first aperture 6 having two orthogonal edges 5. Under the lens 7, a deflector 8 and a second aperture 10 having orthogonal edges 9 are provided. Between the second aperture 10 and a sample 13, a deflector 12 is provided via three electron beam condensing lenses 11a-11c. A beam image is formed on the aperture 6 by the zoom mechanism 3 of the above-described structure to obtain a rectangular pattern restricted by the edges 5. The beam is further turned to a desired size of a rectangular pattern by the edges 9 of the aperture 10. The spot size of beam is changed by these two pairs of edges 5, 9 to project a beam image of a predetermined current density on the sample 13.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16315278A JPS5587433A (en) | 1978-12-26 | 1978-12-26 | Electron beam exposure device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16315278A JPS5587433A (en) | 1978-12-26 | 1978-12-26 | Electron beam exposure device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5587433A true JPS5587433A (en) | 1980-07-02 |
JPS6129137B2 JPS6129137B2 (en) | 1986-07-04 |
Family
ID=15768204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16315278A Granted JPS5587433A (en) | 1978-12-26 | 1978-12-26 | Electron beam exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587433A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5712680A (en) * | 1980-06-27 | 1982-01-22 | Nec Corp | Printer |
JPS5712673A (en) * | 1980-06-27 | 1982-01-22 | Nec Corp | Serial printer |
JPS5712668A (en) * | 1980-06-27 | 1982-01-22 | Nec Corp | Printer |
JPS5762531A (en) * | 1980-10-02 | 1982-04-15 | Fujitsu Ltd | Exposing device by electron beam |
JPS58100427A (en) * | 1981-12-10 | 1983-06-15 | Jeol Ltd | Projection of charged particle beam |
-
1978
- 1978-12-26 JP JP16315278A patent/JPS5587433A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5712680A (en) * | 1980-06-27 | 1982-01-22 | Nec Corp | Printer |
JPS5712673A (en) * | 1980-06-27 | 1982-01-22 | Nec Corp | Serial printer |
JPS5712668A (en) * | 1980-06-27 | 1982-01-22 | Nec Corp | Printer |
JPS6330150B2 (en) * | 1980-06-27 | 1988-06-16 | Nippon Electric Co | |
JPS6353036B2 (en) * | 1980-06-27 | 1988-10-20 | Nippon Electric Co | |
JPS5762531A (en) * | 1980-10-02 | 1982-04-15 | Fujitsu Ltd | Exposing device by electron beam |
JPS58100427A (en) * | 1981-12-10 | 1983-06-15 | Jeol Ltd | Projection of charged particle beam |
Also Published As
Publication number | Publication date |
---|---|
JPS6129137B2 (en) | 1986-07-04 |
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