JPS5538611A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- JPS5538611A JPS5538611A JP10879278A JP10879278A JPS5538611A JP S5538611 A JPS5538611 A JP S5538611A JP 10879278 A JP10879278 A JP 10879278A JP 10879278 A JP10879278 A JP 10879278A JP S5538611 A JPS5538611 A JP S5538611A
- Authority
- JP
- Japan
- Prior art keywords
- signal line
- bit lines
- coupling
- sense
- sense output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 abstract 3
- 238000010168 coupling process Methods 0.000 abstract 3
- 238000005859 coupling reaction Methods 0.000 abstract 3
- 230000004913 activation Effects 0.000 abstract 2
- 102100031476 Cytochrome P450 1A1 Human genes 0.000 abstract 1
- 101000941690 Homo sapiens Cytochrome P450 1A1 Proteins 0.000 abstract 1
- 101000741271 Sorghum bicolor Phosphoenolpyruvate carboxylase 1 Proteins 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10879278A JPS5538611A (en) | 1978-09-04 | 1978-09-04 | Memory circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10879278A JPS5538611A (en) | 1978-09-04 | 1978-09-04 | Memory circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5538611A true JPS5538611A (en) | 1980-03-18 |
| JPS6156596B2 JPS6156596B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Family
ID=14493587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10879278A Granted JPS5538611A (en) | 1978-09-04 | 1978-09-04 | Memory circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5538611A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56127992A (en) * | 1980-02-11 | 1981-10-07 | Fairchild Camera Instr Co | Method of discriminating logic state of memory cell and sense amplifier |
| US4542484A (en) * | 1981-08-05 | 1985-09-17 | Nippon Electric Co., Ltd. | Sense amplifier with high speed, stabilized read-out |
| USRE37593E1 (en) | 1988-06-17 | 2002-03-19 | Hitachi, Ltd. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| JP2008234829A (ja) * | 2004-03-08 | 2008-10-02 | Fujitsu Ltd | 半導体メモリ |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105900U (enrdf_load_stackoverflow) * | 1986-12-26 | 1988-07-08 | ||
| JP2008269785A (ja) * | 2008-07-04 | 2008-11-06 | Renesas Technology Corp | 半導体記憶装置 |
-
1978
- 1978-09-04 JP JP10879278A patent/JPS5538611A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56127992A (en) * | 1980-02-11 | 1981-10-07 | Fairchild Camera Instr Co | Method of discriminating logic state of memory cell and sense amplifier |
| US4542484A (en) * | 1981-08-05 | 1985-09-17 | Nippon Electric Co., Ltd. | Sense amplifier with high speed, stabilized read-out |
| USRE37593E1 (en) | 1988-06-17 | 2002-03-19 | Hitachi, Ltd. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| JP2008234829A (ja) * | 2004-03-08 | 2008-10-02 | Fujitsu Ltd | 半導体メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156596B2 (enrdf_load_stackoverflow) | 1986-12-03 |
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