JPS5536917A - Process of diffusing phosphorus to semiconductor - Google Patents
Process of diffusing phosphorus to semiconductorInfo
- Publication number
- JPS5536917A JPS5536917A JP10813678A JP10813678A JPS5536917A JP S5536917 A JPS5536917 A JP S5536917A JP 10813678 A JP10813678 A JP 10813678A JP 10813678 A JP10813678 A JP 10813678A JP S5536917 A JPS5536917 A JP S5536917A
- Authority
- JP
- Japan
- Prior art keywords
- point
- mixed gas
- phosphorus
- density
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To manufacture such semiconductor elements as are uniform in characteristics by diffusing phosphorus evenly to a semiconductor substrate with the density of phosphorous compound in a mixed gas current adjusted to come in a given range and further the diffusion temperature and the oxygen density in the mixed gas adjusted to come in a specified range.
CONSTITUTION: To diffuse phosphorus to a semiconductor substrate in a non- oxidizable gas including phosphorous compound and an acid mixed gas current with liquid or gaseous compoud as a diffusion source, the phosphorus density in the mixed gas current is adjusted to 0.85W2.6×10-4mole/l. Where diffusion temperature °C is taken on lateral axis and oxygen density % in the mixed gas current on vertical axis, phosphorus is diffused evenly to a semiconductor substrate through setting an area to diffuse by connecting in sequence those point A (600°C, 0.8%), point B (675°C, 6%), point C (800°C, 7%), point D (940°C, 17%(, point E (980°C, 17%), point F (1,050°C, 12%), point G (1,100°C, 4%) and point H (1.030°C, 0.8%).
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10813678A JPS605219B2 (en) | 1978-09-05 | 1978-09-05 | Phosphorus diffusion method into semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10813678A JPS605219B2 (en) | 1978-09-05 | 1978-09-05 | Phosphorus diffusion method into semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5536917A true JPS5536917A (en) | 1980-03-14 |
JPS605219B2 JPS605219B2 (en) | 1985-02-08 |
Family
ID=14476837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10813678A Expired JPS605219B2 (en) | 1978-09-05 | 1978-09-05 | Phosphorus diffusion method into semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS605219B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01285797A (en) * | 1988-05-12 | 1989-11-16 | Diesel Kiki Co Ltd | Heat exchanger made of aluminum |
-
1978
- 1978-09-05 JP JP10813678A patent/JPS605219B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01285797A (en) * | 1988-05-12 | 1989-11-16 | Diesel Kiki Co Ltd | Heat exchanger made of aluminum |
Also Published As
Publication number | Publication date |
---|---|
JPS605219B2 (en) | 1985-02-08 |
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