JPS5536917A - Process of diffusing phosphorus to semiconductor - Google Patents

Process of diffusing phosphorus to semiconductor

Info

Publication number
JPS5536917A
JPS5536917A JP10813678A JP10813678A JPS5536917A JP S5536917 A JPS5536917 A JP S5536917A JP 10813678 A JP10813678 A JP 10813678A JP 10813678 A JP10813678 A JP 10813678A JP S5536917 A JPS5536917 A JP S5536917A
Authority
JP
Japan
Prior art keywords
point
mixed gas
phosphorus
density
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10813678A
Other languages
Japanese (ja)
Other versions
JPS605219B2 (en
Inventor
Naohiro Monma
Hiroyuki Taniguchi
Hiroshi Kaneko
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10813678A priority Critical patent/JPS605219B2/en
Publication of JPS5536917A publication Critical patent/JPS5536917A/en
Publication of JPS605219B2 publication Critical patent/JPS605219B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture such semiconductor elements as are uniform in characteristics by diffusing phosphorus evenly to a semiconductor substrate with the density of phosphorous compound in a mixed gas current adjusted to come in a given range and further the diffusion temperature and the oxygen density in the mixed gas adjusted to come in a specified range.
CONSTITUTION: To diffuse phosphorus to a semiconductor substrate in a non- oxidizable gas including phosphorous compound and an acid mixed gas current with liquid or gaseous compoud as a diffusion source, the phosphorus density in the mixed gas current is adjusted to 0.85W2.6×10-4mole/l. Where diffusion temperature °C is taken on lateral axis and oxygen density % in the mixed gas current on vertical axis, phosphorus is diffused evenly to a semiconductor substrate through setting an area to diffuse by connecting in sequence those point A (600°C, 0.8%), point B (675°C, 6%), point C (800°C, 7%), point D (940°C, 17%(, point E (980°C, 17%), point F (1,050°C, 12%), point G (1,100°C, 4%) and point H (1.030°C, 0.8%).
COPYRIGHT: (C)1980,JPO&Japio
JP10813678A 1978-09-05 1978-09-05 Phosphorus diffusion method into semiconductors Expired JPS605219B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10813678A JPS605219B2 (en) 1978-09-05 1978-09-05 Phosphorus diffusion method into semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10813678A JPS605219B2 (en) 1978-09-05 1978-09-05 Phosphorus diffusion method into semiconductors

Publications (2)

Publication Number Publication Date
JPS5536917A true JPS5536917A (en) 1980-03-14
JPS605219B2 JPS605219B2 (en) 1985-02-08

Family

ID=14476837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10813678A Expired JPS605219B2 (en) 1978-09-05 1978-09-05 Phosphorus diffusion method into semiconductors

Country Status (1)

Country Link
JP (1) JPS605219B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01285797A (en) * 1988-05-12 1989-11-16 Diesel Kiki Co Ltd Heat exchanger made of aluminum

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01285797A (en) * 1988-05-12 1989-11-16 Diesel Kiki Co Ltd Heat exchanger made of aluminum

Also Published As

Publication number Publication date
JPS605219B2 (en) 1985-02-08

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