JPS5470770A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5470770A
JPS5470770A JP13806877A JP13806877A JPS5470770A JP S5470770 A JPS5470770 A JP S5470770A JP 13806877 A JP13806877 A JP 13806877A JP 13806877 A JP13806877 A JP 13806877A JP S5470770 A JPS5470770 A JP S5470770A
Authority
JP
Japan
Prior art keywords
oxide film
film
heat treatment
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13806877A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Akira Nishimoto
Kuniaki Miyake
Hirokazu Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13806877A priority Critical patent/JPS5470770A/en
Publication of JPS5470770A publication Critical patent/JPS5470770A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To lower the process temperature with no increment of the phosphorus density for the oxide film through a heat treatment in the high-pressure atmosphere.
CONSTITUTION: Poly Si3 is formed selectively on heat oxide film 2 of Si substrate 1 and then covered with phosphorous glass oxide film 4. Then a heat treatment is given in high-pressure N2 of, for example, 6.6Kg/cm3 for 30 minutes and at 1000°C. As a result, the good-quality and smooth film 4 is obtained with a small angle and with a temperature lower than the conventional film by 50°C, thus eliminating the wiring desconnection as well as the poor contact.
COPYRIGHT: (C)1979,JPO&Japio
JP13806877A 1977-11-16 1977-11-16 Manufacture of semiconductor device Pending JPS5470770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13806877A JPS5470770A (en) 1977-11-16 1977-11-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13806877A JPS5470770A (en) 1977-11-16 1977-11-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5470770A true JPS5470770A (en) 1979-06-06

Family

ID=15213213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13806877A Pending JPS5470770A (en) 1977-11-16 1977-11-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5470770A (en)

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