JPS5534158A - Vacuum reaction apparatus - Google Patents

Vacuum reaction apparatus

Info

Publication number
JPS5534158A
JPS5534158A JP10732878A JP10732878A JPS5534158A JP S5534158 A JPS5534158 A JP S5534158A JP 10732878 A JP10732878 A JP 10732878A JP 10732878 A JP10732878 A JP 10732878A JP S5534158 A JPS5534158 A JP S5534158A
Authority
JP
Japan
Prior art keywords
vacuum reaction
pump
liquid sealing
reaction furnace
safe material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10732878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6235807B2 (ru
Inventor
Akira Kojima
Hisayoshi Yamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10732878A priority Critical patent/JPS5534158A/ja
Publication of JPS5534158A publication Critical patent/JPS5534158A/ja
Publication of JPS6235807B2 publication Critical patent/JPS6235807B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
JP10732878A 1978-09-01 1978-09-01 Vacuum reaction apparatus Granted JPS5534158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10732878A JPS5534158A (en) 1978-09-01 1978-09-01 Vacuum reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10732878A JPS5534158A (en) 1978-09-01 1978-09-01 Vacuum reaction apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59047651A Division JPS59197141A (ja) 1984-03-13 1984-03-13 減圧反応装置に於ける排気処理方法

Publications (2)

Publication Number Publication Date
JPS5534158A true JPS5534158A (en) 1980-03-10
JPS6235807B2 JPS6235807B2 (ru) 1987-08-04

Family

ID=14456259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10732878A Granted JPS5534158A (en) 1978-09-01 1978-09-01 Vacuum reaction apparatus

Country Status (1)

Country Link
JP (1) JPS5534158A (ru)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162326A (en) * 1981-03-30 1982-10-06 Fujitsu Ltd Vapor phase growing device
JPS5943519A (ja) * 1982-09-03 1984-03-10 Ulvac Corp プラズマｃｖｄ装置における排気系装置
JPS59197141A (ja) * 1984-03-13 1984-11-08 Sony Corp 減圧反応装置に於ける排気処理方法
US4549889A (en) * 1982-05-31 1985-10-29 Semiconductor Energy Laboratory Co., Ltd. Refining process of reactive gas for forming semiconductor layer
JPS6196727A (ja) * 1984-10-17 1986-05-15 Toshiba Ceramics Co Ltd Ｃｖｄ炉用排ガス装置
JPH0296725U (ru) * 1989-01-20 1990-08-01
JPH05175186A (ja) * 1991-12-24 1993-07-13 Mitsubishi Electric Corp 半導体製造装置
JPH10220832A (ja) * 1997-02-03 1998-08-21 Mitsubishi Heavy Ind Ltd 安全装置
WO2007003882A1 (en) * 2005-07-06 2007-01-11 Edwards Limited Method of treating an exhaust gas
JP2008534251A (ja) * 2005-03-22 2008-08-28 エドワーズ リミテッド ガス流の処理方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226171B2 (ru) * 1981-03-30 1987-06-08 Fujitsu Ltd
JPS57162326A (en) * 1981-03-30 1982-10-06 Fujitsu Ltd Vapor phase growing device
US4549889A (en) * 1982-05-31 1985-10-29 Semiconductor Energy Laboratory Co., Ltd. Refining process of reactive gas for forming semiconductor layer
US4623369A (en) * 1982-05-31 1986-11-18 Semiconductor Energy Laboratory Co., Ltd. Refining process of reactive gas for forming semiconductor layer
JPS5943519A (ja) * 1982-09-03 1984-03-10 Ulvac Corp プラズマｃｖｄ装置における排気系装置
JPH0415612B2 (ru) * 1982-09-03 1992-03-18 Ulvac Corp
JPS59197141A (ja) * 1984-03-13 1984-11-08 Sony Corp 減圧反応装置に於ける排気処理方法
JPS6322173B2 (ru) * 1984-03-13 1988-05-11 Sony Corp
JPH0722124B2 (ja) * 1984-10-17 1995-03-08 東芝セラミツクス株式会社 Ｃｖｄ炉用排ガス装置
JPS6196727A (ja) * 1984-10-17 1986-05-15 Toshiba Ceramics Co Ltd Ｃｖｄ炉用排ガス装置
JPH0296725U (ru) * 1989-01-20 1990-08-01
JPH05175186A (ja) * 1991-12-24 1993-07-13 Mitsubishi Electric Corp 半導体製造装置
JPH10220832A (ja) * 1997-02-03 1998-08-21 Mitsubishi Heavy Ind Ltd 安全装置
JP2008534251A (ja) * 2005-03-22 2008-08-28 エドワーズ リミテッド ガス流の処理方法
TWI417131B (zh) * 2005-03-22 2013-12-01 Edwards Ltd 處理氣流的方法
WO2007003882A1 (en) * 2005-07-06 2007-01-11 Edwards Limited Method of treating an exhaust gas

Also Published As

Publication number Publication date
JPS6235807B2 (ru) 1987-08-04

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