JPS55162261A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS55162261A
JPS55162261A JP7033979A JP7033979A JPS55162261A JP S55162261 A JPS55162261 A JP S55162261A JP 7033979 A JP7033979 A JP 7033979A JP 7033979 A JP7033979 A JP 7033979A JP S55162261 A JPS55162261 A JP S55162261A
Authority
JP
Japan
Prior art keywords
wiring
diffused resistor
socket
electrode leadout
crossing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7033979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222457B2 (enrdf_load_stackoverflow
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7033979A priority Critical patent/JPS55162261A/ja
Publication of JPS55162261A publication Critical patent/JPS55162261A/ja
Publication of JPS6222457B2 publication Critical patent/JPS6222457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP7033979A 1979-06-05 1979-06-05 Semiconductor ic device Granted JPS55162261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7033979A JPS55162261A (en) 1979-06-05 1979-06-05 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7033979A JPS55162261A (en) 1979-06-05 1979-06-05 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS55162261A true JPS55162261A (en) 1980-12-17
JPS6222457B2 JPS6222457B2 (enrdf_load_stackoverflow) 1987-05-18

Family

ID=13428551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7033979A Granted JPS55162261A (en) 1979-06-05 1979-06-05 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS55162261A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206171A (ja) * 1982-05-26 1983-12-01 Nec Corp 半導体集積回路装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381093A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Multiinput-multioutput iil
JPS53105384A (en) * 1977-02-25 1978-09-13 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381093A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Multiinput-multioutput iil
JPS53105384A (en) * 1977-02-25 1978-09-13 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206171A (ja) * 1982-05-26 1983-12-01 Nec Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPS6222457B2 (enrdf_load_stackoverflow) 1987-05-18

Similar Documents

Publication Publication Date Title
DE69326710D1 (de) Halbleiteranordnung mit Kurzschlussschaltkreis für einen Spannungsstresstest
DE69113987D1 (de) Monolitische Halbleiteranordnung bestehend aus einer integrierten Kontrollschaltung und aus mindestens einem Leistungstransistor, die auf demselben Chip integriert sind und Herstellungsverfahren.
JPS6455841A (en) Semiconductor integrated circuit device
JPS55162261A (en) Semiconductor ic device
KR870002584A (ko) 반도체 메모리 장치
JPS5378185A (en) Integrated circuit logical element
JPS53127285A (en) Semiconductor integrated circuit device
JPS5216185A (en) Bipolar type semiconductor integrated circuit device
JPS57159053A (en) Multitip package
JPS6432719A (en) Output device for semiconductor integrated circuit
JPS5466784A (en) Semiconductor integrated circuit device
JPS53120288A (en) Constant voltage semiconductor device
JPS53119692A (en) Semiconductor logic circuit device
JPS52115193A (en) Lsi structure
JPS5565470A (en) Mos integrated circuit
JPS5637673A (en) Semiconductor device
JPS54142983A (en) Semiconductor device
JPS6418238A (en) Semiconductor integrated circuit device
JPS56166518A (en) Power supply circuit
JPS5336185A (en) Electrode lead-out method of semiconductor integrated circuit
JPS57129530A (en) Integrated circuit
JPS57199256A (en) Semiconductor integrated circuit device
JPS5397357A (en) Driving circuit by transistor
JPS56134745A (en) Integrated circuit device
JPS5258378A (en) Protection of input to mos type integrated circuit