JPS5637673A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5637673A
JPS5637673A JP11332979A JP11332979A JPS5637673A JP S5637673 A JPS5637673 A JP S5637673A JP 11332979 A JP11332979 A JP 11332979A JP 11332979 A JP11332979 A JP 11332979A JP S5637673 A JPS5637673 A JP S5637673A
Authority
JP
Japan
Prior art keywords
emitter
electrodes
resistors
unit transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11332979A
Other languages
Japanese (ja)
Inventor
Osamu Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11332979A priority Critical patent/JPS5637673A/en
Publication of JPS5637673A publication Critical patent/JPS5637673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To provide a uniform current distribution among unit transistors in a chip of a semiconductor device having a plurality of unit transistors having emitter drive electrodes by connecting external emitter stabilized resistors to the leading electrode portion. CONSTITUTION:A plurality of unit transistors 1 having emitter electrodes of stripe architecture are formed in one semiconductor chip, and these emitter electrodes are connected through leading electrodes 5 to common electrode 6. Emitter resistors 3' are connected to the emitter electordes of the respective transistors 1, and stabilizing point resistors 4 are connected to the connecting points of the resistors 3' to the electrodes 5 additionally. Thus, the current distribution among the unit transistors can become uniform, parasitic capacity can be reduced, and can be particularly adapted for a high frequency transistor.
JP11332979A 1979-09-04 1979-09-04 Semiconductor device Pending JPS5637673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11332979A JPS5637673A (en) 1979-09-04 1979-09-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11332979A JPS5637673A (en) 1979-09-04 1979-09-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5637673A true JPS5637673A (en) 1981-04-11

Family

ID=14609475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11332979A Pending JPS5637673A (en) 1979-09-04 1979-09-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637673A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122777A (en) * 1982-01-14 1983-07-21 Toshiba Corp Semiconductor device
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
US7718289B2 (en) 2002-01-08 2010-05-18 Nissan Motor Co., Ltd. Fuel cell system and related method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122777A (en) * 1982-01-14 1983-07-21 Toshiba Corp Semiconductor device
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
US7718289B2 (en) 2002-01-08 2010-05-18 Nissan Motor Co., Ltd. Fuel cell system and related method

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