JPS55158683A - Light emitting semiconductor - Google Patents

Light emitting semiconductor

Info

Publication number
JPS55158683A
JPS55158683A JP6667979A JP6667979A JPS55158683A JP S55158683 A JPS55158683 A JP S55158683A JP 6667979 A JP6667979 A JP 6667979A JP 6667979 A JP6667979 A JP 6667979A JP S55158683 A JPS55158683 A JP S55158683A
Authority
JP
Japan
Prior art keywords
layers
type
densities
semiconductor substrate
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6667979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6318350B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP6667979A priority Critical patent/JPS55158683A/ja
Priority to US06/154,057 priority patent/US4354140A/en
Publication of JPS55158683A publication Critical patent/JPS55158683A/ja
Publication of JPS6318350B2 publication Critical patent/JPS6318350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP6667979A 1979-05-28 1979-05-28 Light emitting semiconductor Granted JPS55158683A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6667979A JPS55158683A (en) 1979-05-28 1979-05-28 Light emitting semiconductor
US06/154,057 US4354140A (en) 1979-05-28 1980-05-28 Light-emitting semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6667979A JPS55158683A (en) 1979-05-28 1979-05-28 Light emitting semiconductor

Publications (2)

Publication Number Publication Date
JPS55158683A true JPS55158683A (en) 1980-12-10
JPS6318350B2 JPS6318350B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-04-18

Family

ID=13322845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6667979A Granted JPS55158683A (en) 1979-05-28 1979-05-28 Light emitting semiconductor

Country Status (1)

Country Link
JP (1) JPS55158683A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPS6318350B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-04-18

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