JPS57107078A - Photoelectric generator - Google Patents

Photoelectric generator

Info

Publication number
JPS57107078A
JPS57107078A JP55184257A JP18425780A JPS57107078A JP S57107078 A JPS57107078 A JP S57107078A JP 55184257 A JP55184257 A JP 55184257A JP 18425780 A JP18425780 A JP 18425780A JP S57107078 A JPS57107078 A JP S57107078A
Authority
JP
Japan
Prior art keywords
layer
doped
boundary
efficiency
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55184257A
Other languages
Japanese (ja)
Other versions
JPS6328327B2 (en
Inventor
Shinichi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP55184257A priority Critical patent/JPS57107078A/en
Publication of JPS57107078A publication Critical patent/JPS57107078A/en
Publication of JPS6328327B2 publication Critical patent/JPS6328327B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

PURPOSE:To simplify a process and improve photoelectric conversion efficiency by a method wherein two layers of p-Ga1-xAlxAs are formed on an n-GaAs single crystal and mixed crystal ratio x of each layer is changed according to a specified manner. CONSTITUTION:An Au-Ge-Ni alloy electrode 1 is formed on one side of a substrate 2 of material such as Si, II-VI family or III-V family compound semiconductor. On the side of the substrate 2, n-GaAs 3, Be-doped p-Ga1-xAlxAs4 where 0.85<=x<=1 and Be-doped p-Ga1-xAlxAs6 where 0.5<=x<=0.75 are piled and an SiO reflection preventing film 7 and an Au-Be alloy electrode 8 are formed. A P-N junction 5 is shifted from the boundary of the layer 4 by thermal diffusion from the layer 4, so that carrier recombination is avoided by crystal defect generated at the boundary and photoelectric coversion efficiency is improved. Moreover, formation of an electrode becomes easy by taking carrier density of the layer 6 large enough, for instance not less than 10<18>/cm<3>, and resistivity is reduced, so that current loss is eliminated. With above configuration, an antioxidizing film is not necessary and total efficiency is improved to 20% or above.
JP55184257A 1980-12-25 1980-12-25 Photoelectric generator Granted JPS57107078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184257A JPS57107078A (en) 1980-12-25 1980-12-25 Photoelectric generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184257A JPS57107078A (en) 1980-12-25 1980-12-25 Photoelectric generator

Publications (2)

Publication Number Publication Date
JPS57107078A true JPS57107078A (en) 1982-07-03
JPS6328327B2 JPS6328327B2 (en) 1988-06-08

Family

ID=16150138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184257A Granted JPS57107078A (en) 1980-12-25 1980-12-25 Photoelectric generator

Country Status (1)

Country Link
JP (1) JPS57107078A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0287678A (en) * 1988-09-26 1990-03-28 Sharp Corp Solar cell
US5342451A (en) * 1990-06-07 1994-08-30 Varian Associates, Inc. Semiconductor optical power receiver

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0287678A (en) * 1988-09-26 1990-03-28 Sharp Corp Solar cell
US5342451A (en) * 1990-06-07 1994-08-30 Varian Associates, Inc. Semiconductor optical power receiver

Also Published As

Publication number Publication date
JPS6328327B2 (en) 1988-06-08

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