JPS55154792A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS55154792A JPS55154792A JP6217579A JP6217579A JPS55154792A JP S55154792 A JPS55154792 A JP S55154792A JP 6217579 A JP6217579 A JP 6217579A JP 6217579 A JP6217579 A JP 6217579A JP S55154792 A JPS55154792 A JP S55154792A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- clad
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 238000010030 laminating Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6217579A JPS55154792A (en) | 1979-05-22 | 1979-05-22 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6217579A JPS55154792A (en) | 1979-05-22 | 1979-05-22 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55154792A true JPS55154792A (en) | 1980-12-02 |
Family
ID=13192516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6217579A Pending JPS55154792A (en) | 1979-05-22 | 1979-05-22 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154792A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885586A (ja) * | 1981-11-16 | 1983-05-21 | Nec Corp | 半導体レ−ザ |
| US4939743A (en) * | 1988-05-18 | 1990-07-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| US5048037A (en) * | 1989-10-13 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
-
1979
- 1979-05-22 JP JP6217579A patent/JPS55154792A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885586A (ja) * | 1981-11-16 | 1983-05-21 | Nec Corp | 半導体レ−ザ |
| US4939743A (en) * | 1988-05-18 | 1990-07-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| US5048037A (en) * | 1989-10-13 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
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