JPS55154784A - Photoreceptor - Google Patents

Photoreceptor

Info

Publication number
JPS55154784A
JPS55154784A JP6299979A JP6299979A JPS55154784A JP S55154784 A JPS55154784 A JP S55154784A JP 6299979 A JP6299979 A JP 6299979A JP 6299979 A JP6299979 A JP 6299979A JP S55154784 A JPS55154784 A JP S55154784A
Authority
JP
Japan
Prior art keywords
layer
region
type
same
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244704B2 (enExample
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6299979A priority Critical patent/JPS55154784A/ja
Publication of JPS55154784A publication Critical patent/JPS55154784A/ja
Publication of JPS6244704B2 publication Critical patent/JPS6244704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Light Receiving Elements (AREA)
JP6299979A 1979-05-22 1979-05-22 Photoreceptor Granted JPS55154784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299979A JPS55154784A (en) 1979-05-22 1979-05-22 Photoreceptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299979A JPS55154784A (en) 1979-05-22 1979-05-22 Photoreceptor

Publications (2)

Publication Number Publication Date
JPS55154784A true JPS55154784A (en) 1980-12-02
JPS6244704B2 JPS6244704B2 (enExample) 1987-09-22

Family

ID=13216577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299979A Granted JPS55154784A (en) 1979-05-22 1979-05-22 Photoreceptor

Country Status (1)

Country Link
JP (1) JPS55154784A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384169A (ja) * 1986-09-29 1988-04-14 Matsushita Electronics Corp 光半導体装置
JPH01303752A (ja) * 1988-05-31 1989-12-07 Oki Electric Ind Co Ltd 固体撮像装置の感光部構造
JPH08213647A (ja) * 1995-12-07 1996-08-20 Matsushita Electron Corp 光半導体装置
JPH08228019A (ja) * 1995-12-07 1996-09-03 Matsushita Electron Corp 光半導体装置
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
US6878977B1 (en) 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
EP0908956B1 (en) * 1997-10-06 2007-11-21 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384169A (ja) * 1986-09-29 1988-04-14 Matsushita Electronics Corp 光半導体装置
JPH01303752A (ja) * 1988-05-31 1989-12-07 Oki Electric Ind Co Ltd 固体撮像装置の感光部構造
JPH08213647A (ja) * 1995-12-07 1996-08-20 Matsushita Electron Corp 光半導体装置
JPH08228019A (ja) * 1995-12-07 1996-09-03 Matsushita Electron Corp 光半導体装置
EP0908956B1 (en) * 1997-10-06 2007-11-21 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
US6878977B1 (en) 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
US7151305B2 (en) 1999-02-25 2006-12-19 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
EP2287917A2 (en) 1999-02-25 2011-02-23 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device

Also Published As

Publication number Publication date
JPS6244704B2 (enExample) 1987-09-22

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