JPS55153377A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS55153377A
JPS55153377A JP6185779A JP6185779A JPS55153377A JP S55153377 A JPS55153377 A JP S55153377A JP 6185779 A JP6185779 A JP 6185779A JP 6185779 A JP6185779 A JP 6185779A JP S55153377 A JPS55153377 A JP S55153377A
Authority
JP
Japan
Prior art keywords
film
layer
gate
pattern
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6185779A
Other languages
English (en)
Inventor
Hiromitsu Takagi
Shotaro Umebachi
Kota Kano
Iwao Teramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP6185779A priority Critical patent/JPS55153377A/ja
Priority to US06/149,621 priority patent/US4351099A/en
Priority to DE3018594A priority patent/DE3018594C2/de
Priority to CA000352036A priority patent/CA1136290A/en
Priority to GB8016353A priority patent/GB2052858B/en
Publication of JPS55153377A publication Critical patent/JPS55153377A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
    • H01L29/66909—Vertical transistors, e.g. tecnetrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6185779A 1979-05-18 1979-05-18 Production of semiconductor device Pending JPS55153377A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6185779A JPS55153377A (en) 1979-05-18 1979-05-18 Production of semiconductor device
US06/149,621 US4351099A (en) 1979-05-18 1980-05-12 Method of making FET utilizing shadow masking and diffusion from a doped oxide
DE3018594A DE3018594C2 (de) 1979-05-18 1980-05-14 Verfahren zum Herstellen eines Sperrschicht-Feldeffekttransistors
CA000352036A CA1136290A (en) 1979-05-18 1980-05-15 Method of making fet
GB8016353A GB2052858B (en) 1979-05-18 1980-05-16 Method of making field effect transistors with short gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6185779A JPS55153377A (en) 1979-05-18 1979-05-18 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55153377A true JPS55153377A (en) 1980-11-29

Family

ID=13183184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6185779A Pending JPS55153377A (en) 1979-05-18 1979-05-18 Production of semiconductor device

Country Status (5)

Country Link
US (1) US4351099A (ja)
JP (1) JPS55153377A (ja)
CA (1) CA1136290A (ja)
DE (1) DE3018594C2 (ja)
GB (1) GB2052858B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
US4497107A (en) * 1981-11-12 1985-02-05 Gte Laboratories Incorporated Method of making self-aligned high-frequency static induction transistor
US4569698A (en) * 1982-02-25 1986-02-11 Raytheon Company Method of forming isolated device regions by selective successive etching of composite masking layers and semiconductor material prior to ion implantation
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
JPS59229876A (ja) * 1983-06-13 1984-12-24 Toshiba Corp シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法
JPS6032364A (ja) * 1983-08-01 1985-02-19 Toshiba Corp 半導体装置の製造方法
US4502894A (en) * 1983-08-12 1985-03-05 Fairchild Camera & Instrument Corporation Method of fabricating polycrystalline silicon resistors in integrated circuit structures using outdiffusion
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
JPS6213063A (ja) * 1985-07-11 1987-01-21 Nec Corp 化合物半導体多層集積回路
US4677737A (en) * 1986-05-23 1987-07-07 Tektronix, Inc. Self aligned zero overlap charge coupled device
US4745082A (en) * 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4745083A (en) * 1986-11-19 1988-05-17 Sprague Electric Company Method of making a fast IGFET
US4729967A (en) * 1987-04-09 1988-03-08 Gte Laboratories Incorporated Method of fabricating a junction field effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315081A (en) * 1976-07-27 1978-02-10 Nec Corp Junction type field effect transistor and its production

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519852A (en) * 1967-09-26 1970-07-07 Westinghouse Electric Corp Low power analog switch
US3676230A (en) * 1971-02-16 1972-07-11 Trw Inc Method for fabricating semiconductor junctions
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
US3886582A (en) * 1972-04-05 1975-05-27 Sony Corp Field effect transistor
US3940288A (en) * 1973-05-16 1976-02-24 Fujitsu Limited Method of making a semiconductor device
JPS5062385A (ja) * 1973-10-02 1975-05-28
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
JPS50138776A (ja) * 1974-04-17 1975-11-05
GB1545208A (en) * 1975-09-27 1979-05-02 Plessey Co Ltd Electrical solid state devices
US4149904A (en) * 1977-10-21 1979-04-17 Ncr Corporation Method for forming ion-implanted self-aligned gate structure by controlled ion scattering
DE2824026A1 (de) * 1978-06-01 1979-12-20 Licentia Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315081A (en) * 1976-07-27 1978-02-10 Nec Corp Junction type field effect transistor and its production

Also Published As

Publication number Publication date
CA1136290A (en) 1982-11-23
GB2052858A (en) 1981-01-28
US4351099A (en) 1982-09-28
DE3018594A1 (de) 1980-11-27
DE3018594C2 (de) 1985-08-01
GB2052858B (en) 1983-07-20

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