JPS55153370A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS55153370A
JPS55153370A JP6034479A JP6034479A JPS55153370A JP S55153370 A JPS55153370 A JP S55153370A JP 6034479 A JP6034479 A JP 6034479A JP 6034479 A JP6034479 A JP 6034479A JP S55153370 A JPS55153370 A JP S55153370A
Authority
JP
Japan
Prior art keywords
film
substrate
etching
exposed
pressure resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6034479A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213827B2 (enrdf_load_stackoverflow
Inventor
Satoru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6034479A priority Critical patent/JPS55153370A/ja
Publication of JPS55153370A publication Critical patent/JPS55153370A/ja
Publication of JPH0213827B2 publication Critical patent/JPH0213827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
JP6034479A 1979-05-18 1979-05-18 Manufacturing method of semiconductor device Granted JPS55153370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6034479A JPS55153370A (en) 1979-05-18 1979-05-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6034479A JPS55153370A (en) 1979-05-18 1979-05-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55153370A true JPS55153370A (en) 1980-11-29
JPH0213827B2 JPH0213827B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=13139442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6034479A Granted JPS55153370A (en) 1979-05-18 1979-05-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55153370A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130260U (ja) * 1984-07-26 1986-02-24 新電元工業株式会社 絶縁ゲ−ト型電界効果トランジスタ
JPS62150886A (ja) * 1985-12-25 1987-07-04 Mitsubishi Electric Corp 半導体装置およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291656A (en) * 1976-01-28 1977-08-02 Toshiba Corp Production of semiconductor device
JPS52129285A (en) * 1976-04-21 1977-10-29 Fujitsu Ltd Production of igfet
JPS55118674A (en) * 1979-03-05 1980-09-11 Nec Corp Fabricating method of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291656A (en) * 1976-01-28 1977-08-02 Toshiba Corp Production of semiconductor device
JPS52129285A (en) * 1976-04-21 1977-10-29 Fujitsu Ltd Production of igfet
JPS55118674A (en) * 1979-03-05 1980-09-11 Nec Corp Fabricating method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130260U (ja) * 1984-07-26 1986-02-24 新電元工業株式会社 絶縁ゲ−ト型電界効果トランジスタ
JPS62150886A (ja) * 1985-12-25 1987-07-04 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0213827B2 (enrdf_load_stackoverflow) 1990-04-05

Similar Documents

Publication Publication Date Title
JPS55153377A (en) Production of semiconductor device
JPS5599744A (en) Manufacture of semiconductor device
JPS54108582A (en) Manufacture of silicon type field effect transistor
JPS55153370A (en) Manufacturing method of semiconductor device
JPS56124270A (en) Manufacture of semiconductor device
JPS5742169A (en) Production of semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS54130883A (en) Production of semiconductor device
JPS5775460A (en) Manufacture of semiconductor device
JPS57204146A (en) Manufacture of semiconductor device
JPS5718362A (en) Semiconductor device and manufacture thereof
JPS55162270A (en) Semiconductor device
JPS5762559A (en) Semiconductor device
JPS5559778A (en) Method of fabricating semiconductor device
JPS54117690A (en) Production of semiconductor device
JPS56133844A (en) Semiconductor device
JPS6468965A (en) Manufacture of semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS577153A (en) Preparation of semiconductor device
JPS57204145A (en) Manufacture of semiconductor device
JPS55130174A (en) Method of fabricating semiconductor device
JPS5596652A (en) Method of fabricating semiconductor device
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS5710246A (en) Manufacture of semiconductor device
JPS5679446A (en) Production of semiconductor device