JPS5515212A - Electronic beam exposure apparatus - Google Patents

Electronic beam exposure apparatus

Info

Publication number
JPS5515212A
JPS5515212A JP8772578A JP8772578A JPS5515212A JP S5515212 A JPS5515212 A JP S5515212A JP 8772578 A JP8772578 A JP 8772578A JP 8772578 A JP8772578 A JP 8772578A JP S5515212 A JPS5515212 A JP S5515212A
Authority
JP
Japan
Prior art keywords
aperture
electronic
electronic beam
shape
deflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8772578A
Other languages
Japanese (ja)
Inventor
Akihira Fujinami
Tsuneo Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8772578A priority Critical patent/JPS5515212A/en
Publication of JPS5515212A publication Critical patent/JPS5515212A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain an electronic beam with a desired current density distribution by selecting anyone of the electronic beam shaped by a beam deflection and a shape aperture. CONSTITUTION:An electronic beam radiated from an electronic gun 1 is focussed into a shape spot by a shape aperture and lens 2. The focussed beam is projected onto a second aperture 4, and at this time point, a current density distribution 8 is extended symmetrically about a center. This beam is deflected by a deflection path 3 to select the beam portion passing through the aperture 4. The beam passing through the aperture 4 is contracted by a contraction projecting lens system 5 into a predetermined size and is projected by a deflector 6 onto a d desirable position on the material. As a result, the electronic beam with a deflected distribution can be obtained, whereby correcting a variation of a pattern size due to the close approach to the patterns.
JP8772578A 1978-07-20 1978-07-20 Electronic beam exposure apparatus Pending JPS5515212A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8772578A JPS5515212A (en) 1978-07-20 1978-07-20 Electronic beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8772578A JPS5515212A (en) 1978-07-20 1978-07-20 Electronic beam exposure apparatus

Publications (1)

Publication Number Publication Date
JPS5515212A true JPS5515212A (en) 1980-02-02

Family

ID=13922879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8772578A Pending JPS5515212A (en) 1978-07-20 1978-07-20 Electronic beam exposure apparatus

Country Status (1)

Country Link
JP (1) JPS5515212A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams

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