JPS55149576A - Photodetection sensor array unit - Google Patents

Photodetection sensor array unit

Info

Publication number
JPS55149576A
JPS55149576A JP5688979A JP5688979A JPS55149576A JP S55149576 A JPS55149576 A JP S55149576A JP 5688979 A JP5688979 A JP 5688979A JP 5688979 A JP5688979 A JP 5688979A JP S55149576 A JPS55149576 A JP S55149576A
Authority
JP
Japan
Prior art keywords
layer
selenium
cadmium selenide
sensor array
transparent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5688979A
Other languages
Japanese (ja)
Other versions
JPS5932948B2 (en
Inventor
Yoshihiko Mizushima
Akitsu Takeda
Hideo Ito
Kazumi Komiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Origin Electric Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Origin Electric Co Ltd
Priority to JP54056889A priority Critical patent/JPS5932948B2/en
Publication of JPS55149576A publication Critical patent/JPS55149576A/en
Publication of JPS5932948B2 publication Critical patent/JPS5932948B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium

Abstract

PURPOSE:To form the rectifying junction and to prevent the crystal selenium layer from being peeled off, by forming the selenium layer after the provision of the cadmium selenide layer on the transparent electrode on the substrate. CONSTITUTION:On the transparent electrode 5 on the glass substrate 4, the cadmium selenide layer 6 split into a plurality is formed. The selenium layer 7 is formed on the cadmium selenide layer 6. On the layer 7, the electrode 8 which has resistive contact with selenium such as tellrium and gold is formed, and uniform selenium layer is obtained with heat treatment after that. When light irradiates the sensor of this construction, electromotive force is produced on the said resistance conact. Further, sequential discharge is made with the switch switched with the scanning pulse, then the time series pulse signal is picked up for the discharge current.
JP54056889A 1979-05-11 1979-05-11 Light receiving sensor array device Expired JPS5932948B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54056889A JPS5932948B2 (en) 1979-05-11 1979-05-11 Light receiving sensor array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54056889A JPS5932948B2 (en) 1979-05-11 1979-05-11 Light receiving sensor array device

Publications (2)

Publication Number Publication Date
JPS55149576A true JPS55149576A (en) 1980-11-20
JPS5932948B2 JPS5932948B2 (en) 1984-08-11

Family

ID=13039990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54056889A Expired JPS5932948B2 (en) 1979-05-11 1979-05-11 Light receiving sensor array device

Country Status (1)

Country Link
JP (1) JPS5932948B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115259A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion device and manufacture thereof
US8061998B2 (en) 2002-09-27 2011-11-22 Aloys Wobben Construction apparatus and method for a wind power installation
JP2015233027A (en) * 2013-06-13 2015-12-24 日本放送協会 Photoelectric conversion device, manufacturing method thereof, lamination type solid-state imaging device, and solar battery
JP2017017191A (en) * 2015-07-01 2017-01-19 日本放送協会 Photoelectric conversion element, manufacturing method for photoelectric conversion element and solid image pickup element
JP2017034039A (en) * 2015-07-30 2017-02-09 日本放送協会 Photoelectric conversion element, manufacturing method for photoelectric conversion element, solid state imaging device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115259A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion device and manufacture thereof
US8061998B2 (en) 2002-09-27 2011-11-22 Aloys Wobben Construction apparatus and method for a wind power installation
JP2015233027A (en) * 2013-06-13 2015-12-24 日本放送協会 Photoelectric conversion device, manufacturing method thereof, lamination type solid-state imaging device, and solar battery
JP2017017191A (en) * 2015-07-01 2017-01-19 日本放送協会 Photoelectric conversion element, manufacturing method for photoelectric conversion element and solid image pickup element
JP2017034039A (en) * 2015-07-30 2017-02-09 日本放送協会 Photoelectric conversion element, manufacturing method for photoelectric conversion element, solid state imaging device

Also Published As

Publication number Publication date
JPS5932948B2 (en) 1984-08-11

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