JPS5932948B2 - Light receiving sensor array device - Google Patents
Light receiving sensor array deviceInfo
- Publication number
- JPS5932948B2 JPS5932948B2 JP54056889A JP5688979A JPS5932948B2 JP S5932948 B2 JPS5932948 B2 JP S5932948B2 JP 54056889 A JP54056889 A JP 54056889A JP 5688979 A JP5688979 A JP 5688979A JP S5932948 B2 JPS5932948 B2 JP S5932948B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- receiving sensor
- sensor array
- selenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 42
- 229910052711 selenium Inorganic materials 0.000 claims description 42
- 239000011669 selenium Substances 0.000 claims description 42
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】
本発明は受光センサアレイ装置に関するもので、特にフ
ァクシミリなどの光電変換装置に適用するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light receiving sensor array device, and is particularly applicable to a photoelectric conversion device such as a facsimile.
従来ファクシミリ用センサには、シリコン集積回路上に
原図を光学的手段によつて縮少投影するものが用いられ
ていたが、光学系などを必要とするために装置の小型化
が不可能であつた。Conventional facsimile sensors have used optical means to reduce and project the original image onto a silicon integrated circuit, but this requires an optical system, making it impossible to miniaturize the device. Ta.
この欠点を除去するために、多結晶もしくは無定形材料
の整流性逆バイアス状態を利用するものなどが提案され
たが、多結晶のものは感度などで不充分であり、無定形
のものは６０〜７０℃程度で結晶化による特性変化を生
ずるなどの欠点を有していた。一方、従来のセレン光電
池などは、単一セルとしては良好な光起電力などを有し
ていたが、本発明の目的とするような用途に対しては根
本的な欠点を有していた。第１図に示すように鉄または
アルミニウムなどの基板１とセレン層を密着させるため
、１０〜数１０ミクロンの凹凸を有するサンドブラスト
、またはホーミングなどの粗面化が行なわれていた。In order to eliminate this drawback, methods have been proposed that utilize the rectifying reverse bias state of polycrystalline or amorphous materials, but polycrystalline materials are insufficient in terms of sensitivity, and amorphous materials have a It had drawbacks such as changes in properties due to crystallization at temperatures of about 70°C. On the other hand, although conventional selenium photovoltaic cells have good photovoltaic power as a single cell, they have fundamental drawbacks for the purpose of the present invention. As shown in FIG. 1, in order to bring the selenium layer into close contact with a substrate 1 made of iron or aluminum, surface roughening such as sandblasting or homing, which has irregularities of 10 to several tens of microns, has been carried out.
またその基板上のセレン層２は５０〜６０ミクロンの厚
さがあつた。この上にカドミウムを主とする透明電極３
を形成した。このため本発明の目的とする用途から要求
されるような微細な加工もしくは構造をとることは不可
能であり、１ｍｍφ提度の大きさがその限度であつた。
また平滑面を有するガラスなどの基板にはセレン層が剥
離し、従つて安定に付着形成せしめることができなかつ
た。本発明にかかる欠点を除去した受光センサアレイ装
置を提供するものである。以下本発明の受光センサアレ
イ装置を第２図によつて説明する。Also, the selenium layer 2 on the substrate had a thickness of 50 to 60 microns. On top of this, a transparent electrode 3 mainly made of cadmium
was formed. For this reason, it is impossible to achieve the fine processing or structure required for the intended use of the present invention, and the size of the material is limited to a diameter of 1 mm.
Further, the selenium layer peels off from a substrate such as glass having a smooth surface, and therefore it is not possible to form a stable adhesion thereon. It is an object of the present invention to provide a light receiving sensor array device that eliminates the drawbacks of the present invention. The light receiving sensor array device of the present invention will be explained below with reference to FIG.
酸化錫または酸化インジウムなどの透明電極５が所望の
パターンで複数に分割されて被着せしめられているガラ
ス基板４において、所望の透明電極５上に複数個に分割
されたセレン化カドミウム層６を０．０１〜２ミクロン
形成する。In a glass substrate 4 on which a transparent electrode 5 made of tin oxide or indium oxide is divided into a plurality of parts in a desired pattern and deposited thereon, a cadmium selenide layer 6 divided into a plurality of parts is formed on the desired transparent electrode 5. Form 0.01-2 microns.
形成する方法は真空蒸着法、その他特に限定するもので
はな〜・。またセレン化カドミウム層６を形成してから
、必要に応じて熱処理を施こしたり、また光導電性を向
上させるために活性化処理などを行なつても良い。セレ
ン化カドミウム層の厚さが０．０１ミクロンより薄い場
合には、いろゆる島状構造となつたり、またピンホール
を生じやすく均一性が悪くなる。特に活性化のための熱
処理を行なう場合には、セレン化カドミウム層の結晶成
長などの関係から膜厚は厚い方が好ましい。しかし必要
以上に厚い場合には、いたずらにセンサの内部抵抗の増
大をもたらすのみであるため、実用上２ミクロン程度を
限度とするものである。ついで同様にしてセレン層７を
０．０１〜４ミクロン形成する。この場合基板温度が低
い時はセレン層は非結晶に近く、温度が高い場合は結晶
となるが、いずれの場合もセレン化カドミウム６とセレ
ン７とのヘテロ結合の特性を整えるために１８０℃以上
、セレンの融点以下の温度において１０分乃至２時間程
度の熱処理を行なう。この場合ガラスなどの基板ある“
いは透明電極層の上に直接に形成された結晶セレン層は
、周知のように殆んど剥離してしまう。僅かにテルルな
どを介在せしめた場合に結晶セレン層を付着せしめるこ
とができるが、この場合は透明基板側からの光入力は殆
んどできなくなる。かくの如くして透明基板に先にセレ
ン化カドミウム層を設け、その上にセレン層を設けるこ
とによつて熱処理後の結晶セレン層の剥離を完全に防止
することができるようになつた。セレン層の厚さが０、
０１ミクロンより薄い場合には、セレン化カドミウムの
場合と同様に均一性が悪くなる。また膜厚が１０数ミク
ロン以上、極度に厚くなる場合には、いかにガラスなど
の平滑面をもつ基板の上にセレン化カドミウムを介在せ
しめても部分的に亀裂または剥離を生じやすくなり、セ
レン層の形成を不安定にする。安定に剥離を確実に防止
したセレン層を得るためには、セレン層は５ミクロン以
下にとどめるのが好ましい。センサの特性からもセレン
の膜厚に比例して抵抗を増加させるのみであるため必要
以上に厚くすることは好ましくない。しかし下記の結晶
化にともなう空隙の発生は、ある程度厚い方が少なくす
ることができる。以上の点を考慮してセレン層の厚さは
実用上０．０１ミクロン〜４μが最適範囲とされる。ま
たセレン化カドミウム層とセレン層の厚さの合計も５ミ
クロン以下におさえるのが好ましい。しかしこのままセ
レン層７が露呈した状態のまま前記熱処理を行なつた場
合には、セレン層の結晶化による収縮などによつて結晶
セレン層に空隙を生ずるのである。The forming method may be a vacuum evaporation method, but is not particularly limited. Further, after forming the cadmium selenide layer 6, heat treatment may be performed as necessary, or activation treatment may be performed to improve photoconductivity. If the thickness of the cadmium selenide layer is less than 0.01 micron, it may form various island-like structures, and pinholes may easily occur, resulting in poor uniformity. Particularly when performing heat treatment for activation, it is preferable for the film to be thicker in view of crystal growth of the cadmium selenide layer. However, if it is thicker than necessary, it will only unnecessarily increase the internal resistance of the sensor, so the practical limit is about 2 microns. Then, a selenium layer 7 of 0.01 to 4 microns is formed in the same manner. In this case, when the substrate temperature is low, the selenium layer is close to amorphous, and when the temperature is high, it becomes crystalline, but in both cases, the temperature is higher than 180°C in order to adjust the characteristics of the heterobond between cadmium selenide 6 and selenium 7. , heat treatment is performed for about 10 minutes to 2 hours at a temperature below the melting point of selenium. In this case, there is a substrate such as glass.
Or, as is well known, most of the crystalline selenium layer formed directly on the transparent electrode layer peels off. A crystalline selenium layer can be attached if a small amount of tellurium or the like is present, but in this case almost no light can be input from the transparent substrate side. In this manner, by first providing a cadmium selenide layer on a transparent substrate and then providing a selenium layer thereon, it has become possible to completely prevent the crystalline selenium layer from peeling off after heat treatment. The thickness of the selenium layer is 0,
If the thickness is less than 0.01 micron, the uniformity will be poor as in the case of cadmium selenide. Furthermore, if the film is extremely thick (10-odd microns or more), no matter how much cadmium selenide is interposed on a substrate with a smooth surface such as glass, cracks or peeling may occur locally, and the selenium layer destabilizes the formation of In order to obtain a selenium layer that stably prevents peeling, it is preferable that the selenium layer has a thickness of 5 microns or less. Considering the characteristics of the sensor, it is not preferable to make the selenium film thicker than necessary because the resistance only increases in proportion to the thickness of the selenium film. However, the generation of voids due to crystallization described below can be reduced by increasing the thickness to a certain extent. Considering the above points, the optimum thickness of the selenium layer is set to be 0.01 micron to 4 micron in practical terms. It is also preferable that the total thickness of the cadmium selenide layer and the selenium layer is kept to 5 microns or less. However, if the heat treatment is performed while the selenium layer 7 is exposed, voids will be formed in the crystalline selenium layer due to shrinkage due to crystallization of the selenium layer.
これはこの結晶セレン層の上に形成する電極８と下の電
極５もしくはセレン化カドミウム層６との短絡を発生さ
せ、またセンサーの微小部分の光特性に著しいムラを生
ずるなど重大な欠陥を生ずる。本発明においては、かか
る欠陥を除去するためにセレン層７を形成した後、熱処
理を施こすことなく直ちにテルル、金などセレンと抵抗
性接触をなす電極８を形成し、しかる後に１８０℃以上
セレンの融点以下の温度にて熱処理を行なつた。This causes a short circuit between the electrode 8 formed on the crystalline selenium layer and the lower electrode 5 or the cadmium selenide layer 6, and also causes serious defects such as significant unevenness in the optical characteristics of the minute parts of the sensor. . In the present invention, after forming the selenium layer 7 to remove such defects, an electrode 8 such as tellurium or gold that makes resistive contact with the selenium is immediately formed without heat treatment, and then the selenium layer 7 is formed at 180° C. or higher. The heat treatment was carried out at a temperature below the melting point of.
この場合は空隙を生じることなく均一な結晶セレン層を
得ることができる。なおこの場合のセレン層とは、セレ
ンを主成分としているものであつて、通常のセレン整流
器などでセレンに添加するタリウム、ハロゲンその他の
添加物を加えることは全くさしつかえない。第３図に示
すように、このようにしてつくられた基板上に複数個配
列されたセンサアレイ１１は外部アドレスを含む走査回
路１２に接続される。In this case, a uniform crystalline selenium layer can be obtained without creating voids. The selenium layer in this case is mainly composed of selenium, and there is no problem in adding thallium, halogen, or other additives to selenium in a normal selenium rectifier. As shown in FIG. 3, a plurality of sensor arrays 11 arranged on the substrate thus manufactured are connected to a scanning circuit 12 including an external address.
走査回路１２において、シフトレジスタ１３によつて、
パルス発生回路１４から送られるパルスを順次シフトさ
せ、スイツチ素子１５のゲートに順次導通信号を与える
。１６は前記受光センサアレイの電極層間を等価的に示
したダイオードで、アノードが前記スイツチ素子１５を
介して信号処理回路１７に接触されており、カソード側
は接地させている。In the scanning circuit 12, by the shift register 13,
The pulses sent from the pulse generating circuit 14 are sequentially shifted, and conductive signals are sequentially applied to the gates of the switch elements 15. A diode 16 is equivalently shown between the electrode layers of the light receiving sensor array, and its anode is in contact with the signal processing circuit 17 via the switch element 15, and its cathode is grounded.
１８は前記受光センサアレイの電極層間およびその近傍
にある静電容量を等価的に示したコンデンサで、ダイオ
ード１６に並列に接続されており、スイツチ素子１５を
オフ状態として受光センサに光を照射した時、主として
センサのセレン化カドミウム層とセレン層との間に形成
された整流性接触には、照射光量に応じた起電力が誘起
され、それによつて光の照射された近傍の前記コンデン
サ１８に電荷が充電される。18 is a capacitor equivalently representing the capacitance between the electrode layers of the light receiving sensor array and in the vicinity thereof, and is connected in parallel to the diode 16, and when the switch element 15 is turned off, light is irradiated to the light receiving sensor. At this time, an electromotive force corresponding to the amount of irradiated light is induced in the rectifying contact formed mainly between the cadmium selenide layer and the selenium layer of the sensor, which causes the capacitor 18 in the vicinity of the irradiated light to Electric charge is charged.
光の照射に少なくとも若干遅れて走査回路１２の外部ア
ドレスの指定によつて、スイツチ素子１５のゲートにシ
フトレジスタ１３からオン信号を印加すれば、スイツチ
素子１５を介して、信号処理回路１７へ前記コンデンサ
１８の充電電荷の放電にともなう時系列パルス信号が送
出される。信号処理回路１７においては時系列パルス信
号を適宜処理すればよい。また光照射に応じた起電圧を
直接電圧信号として取り出してもよい。さらに本発明の
受光センサアレイはセンサ面積、静電容量等を加減する
ことによつて光感度、飽和露光量などを調整することが
出来る。If an ON signal is applied from the shift register 13 to the gate of the switch element 15 by specifying an external address of the scanning circuit 12 with at least a slight delay after the light irradiation, the above-mentioned signal is sent to the signal processing circuit 17 via the switch element 15. A time-series pulse signal is sent out as the charge in the capacitor 18 is discharged. The signal processing circuit 17 may process the time-series pulse signal as appropriate. Alternatively, the electromotive force in response to light irradiation may be directly extracted as a voltage signal. Further, in the light-receiving sensor array of the present invention, photosensitivity, saturation exposure amount, etc. can be adjusted by adjusting sensor area, capacitance, etc.
また適当な静電容量を付加しておくことも有効である。
前記説明は１次元配置の受光センサアレイについて行な
つたが、２次元配置としても同様の作用をなすことは明
らかである。本発明による受光センサアレイは基板上に
配置された透明電極上にセレン化カドミウム層を設けて
からセレン層を形成することによつて整流性接合を形成
すると同時に結晶セレン層の剥離を完全に防止すること
が出来た。It is also effective to add an appropriate capacitance.
Although the above description has been made with respect to a one-dimensional arrangement of light receiving sensor arrays, it is clear that the same effect can be achieved even with a two-dimensional arrangement. The photodetector array according to the present invention forms a rectifying junction by providing a cadmium selenide layer on a transparent electrode placed on a substrate and then forming a selenium layer, thereby completely preventing separation of the crystalline selenium layer. I was able to do it.
またセレン層の上にテルルなどセレンと抵抗性接触をな
す電極を形成してから熱処理を行なうことにより結晶セ
レン層を均一に形成せしめることができた。また撮像方
式において各センサには直接、外部から電圧を印加しな
いので外部回路の構成が簡単になり、同時に暗電流を除
去し、光信号入射時とのＳＭ比を極めて大きくとること
ができる。また製造のバラツキに起因するもれ電流も除
去できるなどの利点がある本発明の特長は以上のような
大面積の受光センサアレイ装置を容易に作り得ることで
あり、さらにセレン層の剥離およびその結晶化にともな
う空隙の発生を防止しうること、およびそれによつて光
照射時におけるすぐれた光特性を簡易かつ有効利用しう
ることである。Furthermore, by forming an electrode such as tellurium or the like that makes resistive contact with selenium on the selenium layer and then performing heat treatment, it was possible to uniformly form a crystalline selenium layer. Further, in the imaging method, since voltage is not directly applied to each sensor from the outside, the configuration of the external circuit is simplified, and at the same time, dark current can be removed, and the SM ratio when an optical signal is incident can be extremely large. In addition, the present invention has the advantage of being able to eliminate leakage current caused by manufacturing variations.The feature of the present invention is that it is possible to easily produce a large-area light receiving sensor array device as described above, and furthermore, it is possible to easily produce a large-area light-receiving sensor array device as described above. It is possible to prevent the generation of voids due to crystallization, and thereby it is possible to easily and effectively utilize the excellent optical properties during light irradiation.
これによつて大面積受光センサアレイの製造を容易にし
、装置としては読出し時の雑音が少く、安定性、ＳＮ比
及び感度のよい装置をうることができる。This facilitates the manufacture of a large-area light-receiving sensor array, and provides a device with less noise during readout and with good stability, signal-to-noise ratio, and sensitivity.
第１図は従来のセレン光電池の断面図、第２図は本発明
の受光センサアレイの内の単位センサの断面図、第３図
は受光センサの動作を説明する回路図である。
４・・・・・・ガラス基板、５・・・・・・透明電極、
６・・・・・・セレン化カドミウム層、７・・・・・・
セレン層、８・・・・・・電極、１１・・・・・・セン
サアレイ、１２・・・・・・走査回路、１３・・・・・
・シフトレジスタ、１４・・・・・・パルス発生回路、
１５・・・・・・スイツチ素子、１６・・・・・・ダイ
オート―１７・・・・・・信号処理回路、１８・・・・
・・コンデンサ。FIG. 1 is a cross-sectional view of a conventional selenium photovoltaic cell, FIG. 2 is a cross-sectional view of a unit sensor in the light-receiving sensor array of the present invention, and FIG. 3 is a circuit diagram illustrating the operation of the light-receiving sensor. 4...Glass substrate, 5...Transparent electrode,
6...Cadmium selenide layer, 7...
Selenium layer, 8...electrode, 11...sensor array, 12...scanning circuit, 13...
・Shift register, 14...Pulse generation circuit,
15...Switch element, 16...Die-auto-17...Signal processing circuit, 18...
...Capacitor.
Claims (1)
ある電極層間において、前記電極層上にセレン化カドミ
ウム層を設け、ついでセレン化カドミウム層と整流性接
触をなす結晶セレン層を設けた受光センサを複数個配列
し、前記受光センサの電極層間に実質的に電圧を印加し
ない状態で光照射を行なうことによつて起電力を発生せ
しめ、前記受光センサを走査パルスによつて開閉される
スイッチ素子により順次放電し、放電にともなつて前記
受光センサの電極層間に生じる放電電流を時系列パルス
信号として取出してなることを特徴とする受光センサア
レイ装置。 ２ 上記受光センサアレイにおいてセレン化カドミウム
層が０．０１μ〜２μ、セレン層が０．０１μ〜４μで
あることを特徴とする特許請求の範囲第１項記載の受光
センサアレイ装置。[Scope of Claims] 1. A cadmium selenide layer is provided on the electrode layer between electrode layers disposed on a substrate and at least one side thereof is a transparent electrode layer, and then a crystalline selenium layer is provided in rectifying contact with the cadmium selenide layer. A plurality of light-receiving sensors are arranged, and an electromotive force is generated by irradiating light with substantially no voltage applied between the electrode layers of the light-receiving sensors. 1. A light-receiving sensor array device characterized by sequentially discharging by switching elements that are opened and closed, and extracting a discharge current generated between electrode layers of the light-receiving sensor as a time-series pulse signal as the discharge occurs. 2. The light receiving sensor array device according to claim 1, wherein in the light receiving sensor array, the cadmium selenide layer has a thickness of 0.01 μm to 2 μm, and the selenium layer has a thickness of 0.01 μm to 4 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54056889A JPS5932948B2 (en) | 1979-05-11 | 1979-05-11 | Light receiving sensor array device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54056889A JPS5932948B2 (en) | 1979-05-11 | 1979-05-11 | Light receiving sensor array device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55149576A JPS55149576A (en) | 1980-11-20 |
| JPS5932948B2 true JPS5932948B2 (en) | 1984-08-11 |
Family
ID=13039990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54056889A Expired JPS5932948B2 (en) | 1979-05-11 | 1979-05-11 | Light receiving sensor array device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5932948B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115259A (en) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion device and manufacture thereof |
| DE10245078B4 (en) | 2002-09-27 | 2005-08-11 | Aloys Wobben | Wind turbine |
| JP6362257B2 (en) * | 2013-06-13 | 2018-07-25 | 日本放送協会 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, LAMINATED SOLID IMAGE PICKUP ELEMENT, AND SOLAR CELL |
| JP6570173B2 (en) * | 2015-07-01 | 2019-09-04 | 日本放送協会 | Photoelectric conversion element, method for manufacturing photoelectric conversion element, solid-state imaging element |
| JP6575997B2 (en) * | 2015-07-30 | 2019-09-18 | 日本放送協会 | Photoelectric conversion element, method for manufacturing photoelectric conversion element, solid-state imaging element |
-
1979
- 1979-05-11 JP JP54056889A patent/JPS5932948B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55149576A (en) | 1980-11-20 |
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