JPS55148420A - Manufacturing of carbonized silicon crystal layer - Google Patents

Manufacturing of carbonized silicon crystal layer

Info

Publication number
JPS55148420A
JPS55148420A JP5612079A JP5612079A JPS55148420A JP S55148420 A JPS55148420 A JP S55148420A JP 5612079 A JP5612079 A JP 5612079A JP 5612079 A JP5612079 A JP 5612079A JP S55148420 A JPS55148420 A JP S55148420A
Authority
JP
Japan
Prior art keywords
sic
layer
substrate
seed crystal
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5612079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626644B2 (enrdf_load_stackoverflow
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5612079A priority Critical patent/JPS55148420A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS55148420A publication Critical patent/JPS55148420A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS626644B2 publication Critical patent/JPS626644B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP5612079A 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer Granted JPS55148420A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer

Publications (2)

Publication Number Publication Date
JPS55148420A true JPS55148420A (en) 1980-11-19
JPS626644B2 JPS626644B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=13018202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5612079A Granted JPS55148420A (en) 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer

Country Status (1)

Country Link
JP (1) JPS55148420A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05322008A (ja) * 1992-05-22 1993-12-07 Kawasaki Heavy Ind Ltd トランスミッションの潤滑方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0175747U (enrdf_load_stackoverflow) * 1987-11-09 1989-05-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05322008A (ja) * 1992-05-22 1993-12-07 Kawasaki Heavy Ind Ltd トランスミッションの潤滑方法

Also Published As

Publication number Publication date
JPS626644B2 (enrdf_load_stackoverflow) 1987-02-12

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