JPS55146980A - Mnos storage element - Google Patents

Mnos storage element

Info

Publication number
JPS55146980A
JPS55146980A JP5476579A JP5476579A JPS55146980A JP S55146980 A JPS55146980 A JP S55146980A JP 5476579 A JP5476579 A JP 5476579A JP 5476579 A JP5476579 A JP 5476579A JP S55146980 A JPS55146980 A JP S55146980A
Authority
JP
Japan
Prior art keywords
film
voltage
absolute values
threshold voltage
mnos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5476579A
Other languages
Japanese (ja)
Inventor
Kazunari Hayafuchi
Motoyuki Uchino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP5476579A priority Critical patent/JPS55146980A/en
Publication of JPS55146980A publication Critical patent/JPS55146980A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To enable the subject element to read ''1'' and ''0'' levels by making the threshold voltage into an enhancement mode when a MNOS memory element is prepared, by setting the absolute values of the voltage between zero to 1.5 volts and by using the voltage in a level less than and more than said absolute values properly. CONSTITUTION:The P<+>-type isolated region is provided to the edge of the N<->-type Si substrate 1, the very thin gate SiO2 film 2 and Si3N4 film 3 are laminated on the surface of the substrate 1, which is exposed between said regions, the Al gate electrode 4 is attached to the film 3. In this way, the MNOS element of metal- nitride film-oxide film-semiconductor is made up, the threshold voltage is made into an enhancement mode, impurity ions are implanted into the depletion layer directly below the film 2, and the absolute values of the threshold voltage are set between to 1.5 volts. After this, when the element is used for a wristwatch, the voltage zero less than 1.5V and the one more than 1.5V, which is obtained by applying bias voltage to the element, are used properly to obtain a good memory characteristic.
JP5476579A 1979-05-07 1979-05-07 Mnos storage element Pending JPS55146980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5476579A JPS55146980A (en) 1979-05-07 1979-05-07 Mnos storage element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5476579A JPS55146980A (en) 1979-05-07 1979-05-07 Mnos storage element

Publications (1)

Publication Number Publication Date
JPS55146980A true JPS55146980A (en) 1980-11-15

Family

ID=12979859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5476579A Pending JPS55146980A (en) 1979-05-07 1979-05-07 Mnos storage element

Country Status (1)

Country Link
JP (1) JPS55146980A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133680A (en) * 1981-02-12 1982-08-18 Toshiba Corp Nonvolatile semiconductor memory storage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4852383A (en) * 1971-11-01 1973-07-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4852383A (en) * 1971-11-01 1973-07-23

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133680A (en) * 1981-02-12 1982-08-18 Toshiba Corp Nonvolatile semiconductor memory storage
JPH0334670B2 (en) * 1981-02-12 1991-05-23 Tokyo Shibaura Electric Co

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