JPS55146974A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55146974A
JPS55146974A JP5345379A JP5345379A JPS55146974A JP S55146974 A JPS55146974 A JP S55146974A JP 5345379 A JP5345379 A JP 5345379A JP 5345379 A JP5345379 A JP 5345379A JP S55146974 A JPS55146974 A JP S55146974A
Authority
JP
Japan
Prior art keywords
thin film
film
oxide film
substrate
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5345379A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0140506B2 (enrdf_load_stackoverflow
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5345379A priority Critical patent/JPS55146974A/ja
Publication of JPS55146974A publication Critical patent/JPS55146974A/ja
Publication of JPH0140506B2 publication Critical patent/JPH0140506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP5345379A 1979-05-02 1979-05-02 Manufacture of semiconductor device Granted JPS55146974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5345379A JPS55146974A (en) 1979-05-02 1979-05-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5345379A JPS55146974A (en) 1979-05-02 1979-05-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55146974A true JPS55146974A (en) 1980-11-15
JPH0140506B2 JPH0140506B2 (enrdf_load_stackoverflow) 1989-08-29

Family

ID=12943268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5345379A Granted JPS55146974A (en) 1979-05-02 1979-05-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55146974A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62224974A (ja) * 1986-03-27 1987-10-02 Toshiba Corp 半導体装置の製造方法
JP2005514786A (ja) * 2001-12-31 2005-05-19 ジェネラル・セミコンダクター・インコーポレーテッド 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62224974A (ja) * 1986-03-27 1987-10-02 Toshiba Corp 半導体装置の製造方法
JP2005514786A (ja) * 2001-12-31 2005-05-19 ジェネラル・セミコンダクター・インコーポレーテッド 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法
JP4833517B2 (ja) * 2001-12-31 2011-12-07 ジェネラル・セミコンダクター・インコーポレーテッド 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法

Also Published As

Publication number Publication date
JPH0140506B2 (enrdf_load_stackoverflow) 1989-08-29

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