JPS55138874A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS55138874A
JPS55138874A JP4741779A JP4741779A JPS55138874A JP S55138874 A JPS55138874 A JP S55138874A JP 4741779 A JP4741779 A JP 4741779A JP 4741779 A JP4741779 A JP 4741779A JP S55138874 A JPS55138874 A JP S55138874A
Authority
JP
Japan
Prior art keywords
layer
substrate
silicon layer
region
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4741779A
Other languages
English (en)
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4741779A priority Critical patent/JPS55138874A/ja
Priority to DE8080301163T priority patent/DE3068419D1/de
Priority to EP80301163A priority patent/EP0018175B1/en
Priority to US06/139,168 priority patent/US4348802A/en
Publication of JPS55138874A publication Critical patent/JPS55138874A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP4741779A 1979-04-18 1979-04-18 Semiconductor device and method of fabricating the same Pending JPS55138874A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4741779A JPS55138874A (en) 1979-04-18 1979-04-18 Semiconductor device and method of fabricating the same
DE8080301163T DE3068419D1 (en) 1979-04-18 1980-04-10 Process for producing an electrode on a semiconductor device
EP80301163A EP0018175B1 (en) 1979-04-18 1980-04-10 Process for producing an electrode on a semiconductor device
US06/139,168 US4348802A (en) 1979-04-18 1980-04-11 Process for producing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4741779A JPS55138874A (en) 1979-04-18 1979-04-18 Semiconductor device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS55138874A true JPS55138874A (en) 1980-10-30

Family

ID=12774569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4741779A Pending JPS55138874A (en) 1979-04-18 1979-04-18 Semiconductor device and method of fabricating the same

Country Status (4)

Country Link
US (1) US4348802A (ja)
EP (1) EP0018175B1 (ja)
JP (1) JPS55138874A (ja)
DE (1) DE3068419D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673370B2 (ja) * 1982-08-18 1994-09-14 エヌ・シー・アール・インターナショナル・インコーポレイテッド 集積回路のコンタクト製造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055521B1 (en) * 1980-11-29 1985-05-22 Kabushiki Kaisha Toshiba Method of filling a groove in a semiconductor substrate
JPS57126147A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Manufacture of semiconductor device
US4476621A (en) * 1983-02-01 1984-10-16 Gte Communications Products Corporation Process for making transistors with doped oxide densification
US4516145A (en) * 1983-08-31 1985-05-07 Storage Technology Partners Reduction of contact resistance in CMOS integrated circuit chips and the product thereof
US4499653A (en) * 1983-11-03 1985-02-19 Westinghouse Electric Corp. Small dimension field effect transistor using phosphorous doped silicon glass reflow process
US4603472A (en) * 1984-04-19 1986-08-05 Siemens Aktiengesellschaft Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation
US4525221A (en) * 1984-05-16 1985-06-25 Rca Corporation Alloying of aluminum metallization
US4606114A (en) * 1984-08-29 1986-08-19 Texas Instruments Incorporated Multilevel oxide as diffusion source
US4743564A (en) * 1984-12-28 1988-05-10 Kabushiki Kaisha Toshiba Method for manufacturing a complementary MOS type semiconductor device
US4733291A (en) * 1985-11-15 1988-03-22 American Telephone And Telegraph Company, At&T Bell Laboratories Contact vias in semiconductor devices
JPS63128750A (ja) * 1986-11-19 1988-06-01 Toshiba Corp 半導体装置
JPH01255264A (ja) * 1988-04-05 1989-10-12 Seiko Instr Inc 半導体装置の製造方法
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5545926A (en) 1993-10-12 1996-08-13 Kabushiki Kaisha Toshiba Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts
US6004840A (en) * 1994-04-15 1999-12-21 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion
US5681778A (en) * 1995-11-27 1997-10-28 Micron Technology, Inc. Semiconductor processing method of forming a buried contact and conductive line
US6872644B1 (en) * 2001-07-03 2005-03-29 Advanced Micro Devices, Inc. Semiconductor device with non-compounded contacts, and method of making
JP4604641B2 (ja) * 2004-10-18 2011-01-05 株式会社デンソー 半導体装置
US8058143B2 (en) 2009-01-21 2011-11-15 Freescale Semiconductor, Inc. Substrate bonding with metal germanium silicon material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326585A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Production of mis semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3793721A (en) * 1971-08-02 1974-02-26 Texas Instruments Inc Integrated circuit and method of fabrication
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
JPS5232680A (en) * 1975-09-08 1977-03-12 Toko Inc Manufacturing process of insulation gate-type field-effect semiconduct or device
US4013489A (en) * 1976-02-10 1977-03-22 Intel Corporation Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit
US4109372A (en) * 1977-05-02 1978-08-29 International Business Machines Corporation Method for making an insulated gate field effect transistor utilizing a silicon gate and silicide interconnection vias
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
US4221045A (en) * 1978-06-06 1980-09-09 Rockwell International Corporation Self-aligned contacts in an ion implanted VLSI circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326585A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Production of mis semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673370B2 (ja) * 1982-08-18 1994-09-14 エヌ・シー・アール・インターナショナル・インコーポレイテッド 集積回路のコンタクト製造方法

Also Published As

Publication number Publication date
US4348802A (en) 1982-09-14
EP0018175A3 (en) 1981-10-07
DE3068419D1 (en) 1984-08-09
EP0018175A2 (en) 1980-10-29
EP0018175B1 (en) 1984-07-04

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