JPS56129324A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56129324A JPS56129324A JP3298480A JP3298480A JPS56129324A JP S56129324 A JPS56129324 A JP S56129324A JP 3298480 A JP3298480 A JP 3298480A JP 3298480 A JP3298480 A JP 3298480A JP S56129324 A JPS56129324 A JP S56129324A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- sio2
- layer
- photo etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Abstract
PURPOSE:To expose the metallic film at an electrode window section with flatness and no disconnection by degenerating photosensitive resin on the metallic film provided on a semiconductor substrate by plasma process or ion implantation wherein the film is then opened by placing an insulating film on the film and photo etching is applied to the exposed resin. CONSTITUTION:An opening is provided at an SiO2 24 on an Si substrate 21 formed a diffusion layer to form an Al film 26. With a plasma process such as N2 or the like applied by forming a resist mask 28, the surface layer of the resist becomes hard and degenerates and will not be dissolved, evaporated, carbonized at about 500 deg.C. Next, vapor growth is done to an SiO2 film 30 at 450 deg.C, for example and photo etching is performed to the SiO2 30 by etchants of HF group by applying a resist mask 31. At that time, abnoraml photo etching will not be recognized at the opposite ends of a predetermined region 32 owing to the existence of the degenerated resist film 28 and the surface of the Al layer is flat and no breakage of wiring is expected as the Al layer does not contact with the etchants. Finally, the resist 28 is removed by O2 plasma or the like to complete a semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3298480A JPS56129324A (en) | 1980-03-14 | 1980-03-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3298480A JPS56129324A (en) | 1980-03-14 | 1980-03-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56129324A true JPS56129324A (en) | 1981-10-09 |
Family
ID=12374133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3298480A Pending JPS56129324A (en) | 1980-03-14 | 1980-03-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56129324A (en) |
-
1980
- 1980-03-14 JP JP3298480A patent/JPS56129324A/en active Pending
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