JPS55138275A - Semiconductor device for high power - Google Patents

Semiconductor device for high power

Info

Publication number
JPS55138275A
JPS55138275A JP17362079A JP17362079A JPS55138275A JP S55138275 A JPS55138275 A JP S55138275A JP 17362079 A JP17362079 A JP 17362079A JP 17362079 A JP17362079 A JP 17362079A JP S55138275 A JPS55138275 A JP S55138275A
Authority
JP
Japan
Prior art keywords
electrode
deterioration
electrodes
thermal expansion
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17362079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5651507B2 (OSRAM
Inventor
Takashi Mimura
Masumi Fukuda
Hiroichi Matayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17362079A priority Critical patent/JPS55138275A/ja
Publication of JPS55138275A publication Critical patent/JPS55138275A/ja
Publication of JPS5651507B2 publication Critical patent/JPS5651507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H10W72/90—
    • H10W72/536—
    • H10W72/59—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP17362079A 1979-12-28 1979-12-28 Semiconductor device for high power Granted JPS55138275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17362079A JPS55138275A (en) 1979-12-28 1979-12-28 Semiconductor device for high power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17362079A JPS55138275A (en) 1979-12-28 1979-12-28 Semiconductor device for high power

Publications (2)

Publication Number Publication Date
JPS55138275A true JPS55138275A (en) 1980-10-28
JPS5651507B2 JPS5651507B2 (OSRAM) 1981-12-05

Family

ID=15963982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17362079A Granted JPS55138275A (en) 1979-12-28 1979-12-28 Semiconductor device for high power

Country Status (1)

Country Link
JP (1) JPS55138275A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783787A (zh) * 2017-01-24 2017-05-31 东莞市阿甘半导体有限公司 用于芯片封装的电极以及使用该电极的芯片封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783787A (zh) * 2017-01-24 2017-05-31 东莞市阿甘半导体有限公司 用于芯片封装的电极以及使用该电极的芯片封装结构

Also Published As

Publication number Publication date
JPS5651507B2 (OSRAM) 1981-12-05

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