JPS55127035A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55127035A JPS55127035A JP3443179A JP3443179A JPS55127035A JP S55127035 A JPS55127035 A JP S55127035A JP 3443179 A JP3443179 A JP 3443179A JP 3443179 A JP3443179 A JP 3443179A JP S55127035 A JPS55127035 A JP S55127035A
- Authority
- JP
- Japan
- Prior art keywords
- cavity
- cap
- base
- chip
- active area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE: To reduce the amount of incident α-rays over the active area on the chip surface for preventing malfunctions in the active area by forming an α-ray-shielding resin layer on the whole inner face of the cavity of a cap.
CONSTITUTION: To the periphery of the upper surface of an insulating base 10 made of ceramics, many leads 12 are bonded through a glass layer 11 of a low melting point. To the base of the cavity in the center of the upper surface of the base 10, a semiconductor chip 14 is bonded through a bonding layer 13. The chip 14 has an active area liable to malfunction by the α-ray irradiation on its surface. An insulating cap 16 made of ceramics has a cavity 16a in the center of one of its principal planes. The base 10 and the cap 16 are bonded together so that the cavity 16a is opposed to the chip 14. The whole inner face of the cavity 16a of the cap 16 is previously coated with an α-ray-shielding resin 18.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3443179A JPS55127035A (en) | 1979-03-26 | 1979-03-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3443179A JPS55127035A (en) | 1979-03-26 | 1979-03-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55127035A true JPS55127035A (en) | 1980-10-01 |
Family
ID=12414021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3443179A Pending JPS55127035A (en) | 1979-03-26 | 1979-03-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55127035A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5817642A (en) * | 1981-07-10 | 1983-02-01 | シ−メンス・アクチエンゲゼルシヤフト | Protecting device for semiconductor device |
-
1979
- 1979-03-26 JP JP3443179A patent/JPS55127035A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5817642A (en) * | 1981-07-10 | 1983-02-01 | シ−メンス・アクチエンゲゼルシヤフト | Protecting device for semiconductor device |
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