JPS55128846A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55128846A
JPS55128846A JP3547979A JP3547979A JPS55128846A JP S55128846 A JPS55128846 A JP S55128846A JP 3547979 A JP3547979 A JP 3547979A JP 3547979 A JP3547979 A JP 3547979A JP S55128846 A JPS55128846 A JP S55128846A
Authority
JP
Japan
Prior art keywords
base
recess
cap
chip
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3547979A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3547979A priority Critical patent/JPS55128846A/en
Publication of JPS55128846A publication Critical patent/JPS55128846A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To eliminate an erroneous operation of a semiconductor device due to alpha rays of an active region formed on a semiconductor chip by forming a base and a cap of a package of high purity silicon to eliminate an alpha ray generation source.
CONSTITUTION: A plate made of high purity silicon having a recess at the center on the surface is used as a base 10 for carrying a silicon chip 14 having an active region such as memory or the like feasible to erroneously operate owing to alpha ray irradiation. The chip 14 is then secured through an adhesive layer 13 made of an Au foil or the like on the bottom surface of the recess of the base 10, and a number of electrodes formed at the chip 14 are connected to corresponding lead wires 12 using bonding wires 15, respectively. A silicon cap 16 having a recess 16a underneath the cap is coated on the base 10 in such a manner that the recess 16a is disposed at the lower side, and secured to the base 10 using a sealing glass layer 17. SiO2 films 11, 18 are then coated on the inside surfaces of the base 10 and the cap 16 to prevent the shortcircuit therebetween.
COPYRIGHT: (C)1980,JPO&Japio
JP3547979A 1979-03-28 1979-03-28 Semiconductor device Pending JPS55128846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3547979A JPS55128846A (en) 1979-03-28 1979-03-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3547979A JPS55128846A (en) 1979-03-28 1979-03-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55128846A true JPS55128846A (en) 1980-10-06

Family

ID=12442891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3547979A Pending JPS55128846A (en) 1979-03-28 1979-03-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55128846A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907065A (en) * 1988-03-01 1990-03-06 Lsi Logic Corporation Integrated circuit chip sealing assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907065A (en) * 1988-03-01 1990-03-06 Lsi Logic Corporation Integrated circuit chip sealing assembly

Similar Documents

Publication Publication Date Title
KR0119464B1 (en) Semiconductor device and lead frame
JPS5591145A (en) Production of ceramic package
JPS641269A (en) Semiconductor device
JPS5655067A (en) Semiconductor integrated circuit device
JPS5619639A (en) Semiconductor device
JPS5624955A (en) Semiconductor device
JPS55128846A (en) Semiconductor device
JPS55128845A (en) Semiconductor device
JPS55133557A (en) Semiconductor device
JPS57162352A (en) Manufacture of resin-sealed semiconductor device
CA2017080A1 (en) Semiconductor device package structure
JPS55128850A (en) Semiconductor device
JPS55163864A (en) Semiconductor device
JPS56165341A (en) Semiconductor device
JPS55130149A (en) Semiconductor device
JPS5694650A (en) Resin-sealed semiconductor device
JPS5516449A (en) Semiconductor device
JPS6489546A (en) Semiconductor device
JPS55127035A (en) Semiconductor device
JPS5380182A (en) Semiconductor device
JPS647643A (en) Semiconductor device
JPS6028139Y2 (en) semiconductor equipment
JPS56148852A (en) Semiconductor device
JPS5734352A (en) Semiconductor device
JPS56144548A (en) Semiconductor device