JPS55123165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55123165A
JPS55123165A JP3090179A JP3090179A JPS55123165A JP S55123165 A JPS55123165 A JP S55123165A JP 3090179 A JP3090179 A JP 3090179A JP 3090179 A JP3090179 A JP 3090179A JP S55123165 A JPS55123165 A JP S55123165A
Authority
JP
Japan
Prior art keywords
regions
region
type
thyristor
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3090179A
Other languages
Japanese (ja)
Other versions
JPS6013310B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3090179A priority Critical patent/JPS6013310B2/en
Priority to CA000347701A priority patent/CA1135875A/en
Publication of JPS55123165A publication Critical patent/JPS55123165A/en
Publication of JPS6013310B2 publication Critical patent/JPS6013310B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a thyristor, thermally stable and capable of operating at high speed, by providing a region having the effect of a field effect transistor in a thyristor structure. CONSTITUTION:An n<->-type base region 2 is formed on a p<+>-type semiconductor substrate 1, which is to become an anode region. Further, on top of this, a p-type base region 3 is provided. A plurality of n<+>-type emitter regions 4 are formed inside this by diffusion, pn-junctions J2 and J3 are formed respectively between regions 2 and 3 and between regions 3 and 4, thereby forming a thyristor. In this structure, a plurality of p-type regions 8 are provided in a similar manner in the region 3 extending to the boundary between regions 2 and 3 and opposite the gaps of regions 4, forming pn-junctions J4 with the layer 2. In this way, bipolar type transistor 100 is formed of regions 4, 3, 2, and FET element 101 is formed of the part of region 2 adjacent to region 3, regions 8, and the part of region 2 adjacent to substrate 1. By this, neither current concentration nor thermal runaway occurs.
JP3090179A 1979-03-15 1979-03-15 semiconductor equipment Expired JPS6013310B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3090179A JPS6013310B2 (en) 1979-03-15 1979-03-15 semiconductor equipment
CA000347701A CA1135875A (en) 1979-03-15 1980-03-14 Thyristor type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3090179A JPS6013310B2 (en) 1979-03-15 1979-03-15 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS55123165A true JPS55123165A (en) 1980-09-22
JPS6013310B2 JPS6013310B2 (en) 1985-04-06

Family

ID=12316625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3090179A Expired JPS6013310B2 (en) 1979-03-15 1979-03-15 semiconductor equipment

Country Status (2)

Country Link
JP (1) JPS6013310B2 (en)
CA (1) CA1135875A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895866A (en) * 1981-12-02 1983-06-07 Hitachi Ltd Optical trigger switching element
US7816706B2 (en) 2005-07-22 2010-10-19 Abb Technology Ag Power semiconductor device
CN101901832A (en) * 2010-06-28 2010-12-01 启东吉莱电子有限公司 Controlled silicon punchthrough structure formed by gallium diffusion and production method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895866A (en) * 1981-12-02 1983-06-07 Hitachi Ltd Optical trigger switching element
JPH026232B2 (en) * 1981-12-02 1990-02-08 Hitachi Ltd
US7816706B2 (en) 2005-07-22 2010-10-19 Abb Technology Ag Power semiconductor device
CN101901832A (en) * 2010-06-28 2010-12-01 启东吉莱电子有限公司 Controlled silicon punchthrough structure formed by gallium diffusion and production method thereof

Also Published As

Publication number Publication date
JPS6013310B2 (en) 1985-04-06
CA1135875A (en) 1982-11-16

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