JPS55123147A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55123147A JPS55123147A JP3023279A JP3023279A JPS55123147A JP S55123147 A JPS55123147 A JP S55123147A JP 3023279 A JP3023279 A JP 3023279A JP 3023279 A JP3023279 A JP 3023279A JP S55123147 A JPS55123147 A JP S55123147A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- polycrystalline
- diffusion layer
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain wirings of low resistance, small diffusion layer capacity and high density by a method wherein an impurity is introudced through a polycrystalline Si layer to have a diffusion layer as a conductive body for wiring. CONSTITUTION:A polycrystalline Si film 2 on a p-type Si substrate 1 is opened by an Si3N4 film 3, and a p<+>-channel stopper and field oxide film is provided. The Si3N4 film is opened extensively, a shallow n-layer is formed on the substrate 1 and a double wiring layer of low resistance is provided. An SiO2 film 7 is selectively formed, the Si3N4 film 3 and polycrystalline Si film 2 are removed by engraving, a gate oxide film is formed and a gate electrode 9' and a conductive body 9'' for wiring by an n-type polycrystalline Si layer are selectively formed. Then, a shallow n-layer is provided on it with the electrode 9' as a mask, convered with a PSG film 11 and selectively opened a window to have an Al-electrode 12 provided on. With this constitution, a diffusion layer is made shallow with less horizontal diffusion, a wiring density is improved and a diffusion layer capacity is also small. It can have other wirings crossed, further, if the polycrystalline Si film on the diffusion layer is oxidized to form an insulation film on the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3023279A JPS55123147A (en) | 1979-03-15 | 1979-03-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3023279A JPS55123147A (en) | 1979-03-15 | 1979-03-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55123147A true JPS55123147A (en) | 1980-09-22 |
Family
ID=12297957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3023279A Pending JPS55123147A (en) | 1979-03-15 | 1979-03-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55123147A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5085285A (en) * | 1973-11-23 | 1975-07-09 |
-
1979
- 1979-03-15 JP JP3023279A patent/JPS55123147A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5085285A (en) * | 1973-11-23 | 1975-07-09 |
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