JPS55118674A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55118674A
JPS55118674A JP2529179A JP2529179A JPS55118674A JP S55118674 A JPS55118674 A JP S55118674A JP 2529179 A JP2529179 A JP 2529179A JP 2529179 A JP2529179 A JP 2529179A JP S55118674 A JPS55118674 A JP S55118674A
Authority
JP
Japan
Prior art keywords
film
gate electrode
thereat
thermally oxidized
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2529179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159664B2 (enrdf_load_stackoverflow
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2529179A priority Critical patent/JPS55118674A/ja
Priority to US06/127,337 priority patent/US4343078A/en
Publication of JPS55118674A publication Critical patent/JPS55118674A/ja
Publication of JPS6159664B2 publication Critical patent/JPS6159664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2529179A 1979-03-05 1979-03-05 Fabricating method of semiconductor device Granted JPS55118674A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2529179A JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device
US06/127,337 US4343078A (en) 1979-03-05 1980-03-05 IGFET Forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2529179A JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55118674A true JPS55118674A (en) 1980-09-11
JPS6159664B2 JPS6159664B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=12161905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2529179A Granted JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118674A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153370A (en) * 1979-05-18 1980-11-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153370A (en) * 1979-05-18 1980-11-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS6159664B2 (enrdf_load_stackoverflow) 1986-12-17

Similar Documents

Publication Publication Date Title
GB1444386A (en) Integrated circuit fabrication processes
GB1505105A (en) Polycrystalline silicon resistive device for integrated circuits and method for making same
JPS54154977A (en) Semiconductor device and its manufacture
JPS5591877A (en) Manufacture of semiconductor device
JPS54142981A (en) Manufacture of insulation gate type semiconductor device
JPS54108582A (en) Manufacture of silicon type field effect transistor
JPS55118674A (en) Fabricating method of semiconductor device
JPS6484659A (en) Manufacture of semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS5688356A (en) Manufacture of memory cell
JPS5688362A (en) Vertical type power mos transistor
JPS55102269A (en) Method of fabricating semiconductor device
JPS5748248A (en) Manufacture of semiconductor device
JPS5491185A (en) Semiconductor divece
JPS54121071A (en) Insulator gate type field effect semiconductor device
JPS5533051A (en) Manufacture of semiconductor device
JPS5615077A (en) Manufacture of semiconductor device
JPS5640256A (en) Manufacture of semiconductor device
JPS5613772A (en) Preparation of semiconductor device
JPS5651871A (en) Manufacture of complementary type mos semiconductor device
JPS5615078A (en) Manufacture of semiconductor device
JPS56115570A (en) Manufacture of semiconductor device
JPS55151332A (en) Fabricating method of semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof