JPS55117267A - Electron semiconductor element - Google Patents

Electron semiconductor element

Info

Publication number
JPS55117267A
JPS55117267A JP2288880A JP2288880A JPS55117267A JP S55117267 A JPS55117267 A JP S55117267A JP 2288880 A JP2288880 A JP 2288880A JP 2288880 A JP2288880 A JP 2288880A JP S55117267 A JPS55117267 A JP S55117267A
Authority
JP
Japan
Prior art keywords
semiconductor element
electron semiconductor
electron
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2288880A
Other languages
English (en)
Other versions
JPS625345B2 (ja
Inventor
Fuerichi Mauritsuio
Menitsuchi Pietoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of JPS55117267A publication Critical patent/JPS55117267A/ja
Publication of JPS625345B2 publication Critical patent/JPS625345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2288880A 1979-02-27 1980-02-27 Electron semiconductor element Granted JPS55117267A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20551/79A IT1202895B (it) 1979-02-27 1979-02-27 Dispositivo di protezione termica per un componente elettronico a semiconduttore

Publications (2)

Publication Number Publication Date
JPS55117267A true JPS55117267A (en) 1980-09-09
JPS625345B2 JPS625345B2 (ja) 1987-02-04

Family

ID=11168651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2288880A Granted JPS55117267A (en) 1979-02-27 1980-02-27 Electron semiconductor element

Country Status (7)

Country Link
US (1) US4355344A (ja)
JP (1) JPS55117267A (ja)
DE (1) DE3007403A1 (ja)
FR (1) FR2450504A1 (ja)
GB (1) GB2047956B (ja)
IT (1) IT1202895B (ja)
SE (1) SE454926B (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229757A (ja) * 1987-03-19 1988-09-26 Nippon Denso Co Ltd 半導体装置
JPS63229758A (ja) * 1987-03-19 1988-09-26 Nippon Denso Co Ltd 半導体装置
JPH01157573A (ja) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0267767A (ja) * 1988-09-02 1990-03-07 Hitachi Ltd 半導体装置及びその回路
JPH02208977A (ja) * 1989-02-09 1990-08-20 Nissan Motor Co Ltd 半導体装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3415764A1 (de) * 1984-04-27 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur temperaturueberwachung integrierter schaltungen
US4555742A (en) * 1984-05-09 1985-11-26 Motorola, Inc. Short detection circuit and method for an electrical load
US4628397A (en) * 1984-06-04 1986-12-09 General Electric Co. Protected input/output circuitry for a programmable controller
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
GB2182460B (en) * 1985-10-30 1989-10-11 Rolls Royce Failsafe electronic control system
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
US4667265A (en) * 1985-12-20 1987-05-19 National Semiconductor Corporation Adaptive thermal shutdown circuit
DE3844958C2 (de) * 1987-09-28 1999-04-22 Mitsubishi Electric Corp Integrierte Halbleiteranordnung mit Überlastschutz
FR2627027A1 (fr) * 1988-02-04 1989-08-11 Sgs Thomson Microelectronics Detecteur de surcharge thermique dans un circuit integre
EP0341482B1 (de) * 1988-05-11 1991-12-11 Siemens Aktiengesellschaft Schaltungsanordnung zum Erfassen der Übertemperatur eines Halbleiterbauelements
EP0393224B1 (de) * 1989-04-20 1994-02-16 Siemens Aktiengesellschaft Schaltungsanordnung zur Temperaturüberwachung von in einem Halbleiterschaltkreis integrierten Leistungsschalttransistoren
DE68921004T2 (de) * 1989-11-17 1995-09-21 Cons Ric Microelettronica Schutzvorrichtung gegen den Kurzschluss eines MOS-Leistungsbauelementes mit einer vorherbestimmten Abhängigkeit von der Temperatur, bei welcher das Bauelement arbeitet.
GB9016668D0 (en) * 1990-07-30 1990-09-12 Nad Electronics Ltd Power amplifier protection circuit
DE4122653C2 (de) * 1991-07-09 1996-04-11 Daimler Benz Ag Steuerbare Halbleiterschalteinrichtung mit integrierter Strombegrenzung und Übertemperaturabschaltung
US5383083A (en) * 1992-05-19 1995-01-17 Pioneer Electronic Corporation Protective apparatus for power transistor
US5461252A (en) * 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
WO1996013859A1 (de) * 1994-10-28 1996-05-09 Siemens Aktiengesellschaft Festkörperschaltelement mit zwei source-elektroden und festkörperschalter mit einem solchen element
US5694282A (en) * 1996-03-04 1997-12-02 Ford Motor Company Short circuit protection system
JPH10116917A (ja) * 1996-10-14 1998-05-06 Sharp Corp パワートランジスタ
US5757601A (en) * 1997-01-21 1998-05-26 Ford Motor Company Short circuit protection for high side driver
DE19702687C1 (de) * 1997-01-25 1998-08-06 Bosch Gmbh Robert Anordnung zum Schutz gegen Übertemperatur eines Steuergeräts für Gasentladungslampen
DE19742930C1 (de) * 1997-09-29 1998-11-19 Siemens Ag Leistungsschalter mit Überlastschutz
US6055149A (en) * 1998-12-02 2000-04-25 Intersil Corporation Current limited, thermally protected, power device
US6388496B1 (en) * 1999-04-15 2002-05-14 Kabushiki Kaisha Toshiba Semiconductor output circuit
JP3558959B2 (ja) * 2000-05-25 2004-08-25 シャープ株式会社 温度検出回路およびそれを用いる液晶駆動装置
JP3688619B2 (ja) * 2001-10-05 2005-08-31 株式会社東芝 半導体集積回路
US7253689B2 (en) * 2004-06-08 2007-08-07 Telasic Communications, Inc. Low distortion amplifier

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3308271A (en) * 1964-06-08 1967-03-07 Fairchild Camera Instr Co Constant temperature environment for semiconductor circuit elements
US3617859A (en) * 1970-03-23 1971-11-02 Nat Semiconductor Corp Electrical regulator apparatus including a zero temperature coefficient voltage reference circuit
JPS5272183A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Semiconductor device with protecting device
JPS582607B2 (ja) * 1976-03-12 1983-01-18 パイオニア株式会社 温度検知回路
DE2644597C2 (de) * 1976-10-02 1984-08-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Temperaturfühler in einer integrierten Halbleiterschaltung
DE2705583C2 (de) * 1977-02-10 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Transistorschaltung mit einem vor thermischer Zerstörung zu schützenden Transistor
US4146903A (en) * 1977-09-16 1979-03-27 National Semiconductor Corporation System for limiting power dissipation in a power transistor to less than a destructive level

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229757A (ja) * 1987-03-19 1988-09-26 Nippon Denso Co Ltd 半導体装置
JPS63229758A (ja) * 1987-03-19 1988-09-26 Nippon Denso Co Ltd 半導体装置
JPH01157573A (ja) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0267767A (ja) * 1988-09-02 1990-03-07 Hitachi Ltd 半導体装置及びその回路
JPH02208977A (ja) * 1989-02-09 1990-08-20 Nissan Motor Co Ltd 半導体装置

Also Published As

Publication number Publication date
FR2450504B1 (ja) 1983-12-09
SE454926B (sv) 1988-06-06
IT1202895B (it) 1989-02-15
GB2047956A (en) 1980-12-03
FR2450504A1 (fr) 1980-09-26
DE3007403A1 (de) 1980-09-04
JPS625345B2 (ja) 1987-02-04
SE8000502L (sv) 1980-08-28
IT7920551A0 (it) 1979-02-27
US4355344A (en) 1982-10-19
DE3007403C2 (ja) 1989-08-17
GB2047956B (en) 1983-05-18

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