JPS55113699A - Semi-insulating gallium arsenide crystal - Google Patents

Semi-insulating gallium arsenide crystal

Info

Publication number
JPS55113699A
JPS55113699A JP13527579A JP13527579A JPS55113699A JP S55113699 A JPS55113699 A JP S55113699A JP 13527579 A JP13527579 A JP 13527579A JP 13527579 A JP13527579 A JP 13527579A JP S55113699 A JPS55113699 A JP S55113699A
Authority
JP
Japan
Prior art keywords
crystal
concn
melt
less
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13527579A
Other languages
English (en)
Other versions
JPS5929558B2 (ja
Inventor
Shinichi Akai
Kiyohiko Kimie
Keiichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP54135275A priority Critical patent/JPS5929558B2/ja
Publication of JPS55113699A publication Critical patent/JPS55113699A/ja
Publication of JPS5929558B2 publication Critical patent/JPS5929558B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP54135275A 1979-10-22 1979-10-22 半絶縁性砒化ガリウム結晶 Expired JPS5929558B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54135275A JPS5929558B2 (ja) 1979-10-22 1979-10-22 半絶縁性砒化ガリウム結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54135275A JPS5929558B2 (ja) 1979-10-22 1979-10-22 半絶縁性砒化ガリウム結晶

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3364872A Division JPS5346070B2 (ja) 1972-04-04 1972-04-04

Publications (2)

Publication Number Publication Date
JPS55113699A true JPS55113699A (en) 1980-09-02
JPS5929558B2 JPS5929558B2 (ja) 1984-07-21

Family

ID=15147889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54135275A Expired JPS5929558B2 (ja) 1979-10-22 1979-10-22 半絶縁性砒化ガリウム結晶

Country Status (1)

Country Link
JP (1) JPS5929558B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177022A2 (en) * 1984-10-05 1986-04-09 Hitachi, Ltd. GaAs Single Crystal, method of producing the same, and semiconductor device utilizing the same
JPH0562019U (ja) * 1992-01-27 1993-08-13 株式会社トーキン ピン端子付ボビン
US5733805A (en) * 1984-10-05 1998-03-31 Hitachi, Ltd. Method of fabricating semiconductor device utilizing a GaAs single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102570A (ja) * 1972-04-04 1973-12-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102570A (ja) * 1972-04-04 1973-12-22

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177022A2 (en) * 1984-10-05 1986-04-09 Hitachi, Ltd. GaAs Single Crystal, method of producing the same, and semiconductor device utilizing the same
US5733805A (en) * 1984-10-05 1998-03-31 Hitachi, Ltd. Method of fabricating semiconductor device utilizing a GaAs single crystal
US5770873A (en) * 1984-10-05 1998-06-23 Hitachi, Ltd. GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
US6630697B2 (en) 1984-10-05 2003-10-07 Hitachi, Ltd. GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
US6815741B2 (en) 1984-10-05 2004-11-09 Renesas Technology Corp. III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal
JPH0562019U (ja) * 1992-01-27 1993-08-13 株式会社トーキン ピン端子付ボビン

Also Published As

Publication number Publication date
JPS5929558B2 (ja) 1984-07-21

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