JPS5577185A - Preparation of semiconductor luminescent device - Google Patents
Preparation of semiconductor luminescent deviceInfo
- Publication number
- JPS5577185A JPS5577185A JP15000078A JP15000078A JPS5577185A JP S5577185 A JPS5577185 A JP S5577185A JP 15000078 A JP15000078 A JP 15000078A JP 15000078 A JP15000078 A JP 15000078A JP S5577185 A JPS5577185 A JP S5577185A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- boat
- gas
- substrate
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To improve green luminescent efficacy largely, by revising combination of boat material and atmospheric gas, controlling impurities distribution at pn-joint, raising injection efficiency and increasing luminescent center concentration.
CONSTITUTION: A GaP substrate 6 is placed on an indentation of a carbon boat 1, a solution 7 is poured into a carbon rectifier 3 lined with quartz, and then, it is placed on the boat and charged into a furnace. The furnace is filled with H2 gas, and after it reached a prescribed temperature, a solution 7 is made to contact the substrate 6, and then, it is cooled to grow an n-layer. At this time, donor is Si which was isolated as a result of reaction between quartz and H2. Now, when NH3 gas is supplied to Ar atmosphere, Si which is the donor reacts with NH3 to reduce the concentration and from a p-layer by residual acceptor C, and then, it is cooled, a p-layer is laminated and NH3 is stopped at a prescribed temperature for cooling to the room temperature. To thus prepared GaP substrate, a large quantity of N2 can be effectively introduced whereby it becomes possible to produce a green luminescent GaP element of excellent characteristics.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53150000A JPS6019155B2 (en) | 1978-12-06 | 1978-12-06 | Manufacturing method of semiconductor issuing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53150000A JPS6019155B2 (en) | 1978-12-06 | 1978-12-06 | Manufacturing method of semiconductor issuing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5577185A true JPS5577185A (en) | 1980-06-10 |
JPS6019155B2 JPS6019155B2 (en) | 1985-05-14 |
Family
ID=15487268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53150000A Expired JPS6019155B2 (en) | 1978-12-06 | 1978-12-06 | Manufacturing method of semiconductor issuing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6019155B2 (en) |
-
1978
- 1978-12-06 JP JP53150000A patent/JPS6019155B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6019155B2 (en) | 1985-05-14 |
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