JPS5577185A - Preparation of semiconductor luminescent device - Google Patents

Preparation of semiconductor luminescent device

Info

Publication number
JPS5577185A
JPS5577185A JP15000078A JP15000078A JPS5577185A JP S5577185 A JPS5577185 A JP S5577185A JP 15000078 A JP15000078 A JP 15000078A JP 15000078 A JP15000078 A JP 15000078A JP S5577185 A JPS5577185 A JP S5577185A
Authority
JP
Japan
Prior art keywords
layer
boat
gas
substrate
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15000078A
Other languages
Japanese (ja)
Other versions
JPS6019155B2 (en
Inventor
Yoshio Iizuka
Tsuneo Furukawa
Makoto Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53150000A priority Critical patent/JPS6019155B2/en
Publication of JPS5577185A publication Critical patent/JPS5577185A/en
Publication of JPS6019155B2 publication Critical patent/JPS6019155B2/en
Expired legal-status Critical Current

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  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To improve green luminescent efficacy largely, by revising combination of boat material and atmospheric gas, controlling impurities distribution at pn-joint, raising injection efficiency and increasing luminescent center concentration.
CONSTITUTION: A GaP substrate 6 is placed on an indentation of a carbon boat 1, a solution 7 is poured into a carbon rectifier 3 lined with quartz, and then, it is placed on the boat and charged into a furnace. The furnace is filled with H2 gas, and after it reached a prescribed temperature, a solution 7 is made to contact the substrate 6, and then, it is cooled to grow an n-layer. At this time, donor is Si which was isolated as a result of reaction between quartz and H2. Now, when NH3 gas is supplied to Ar atmosphere, Si which is the donor reacts with NH3 to reduce the concentration and from a p-layer by residual acceptor C, and then, it is cooled, a p-layer is laminated and NH3 is stopped at a prescribed temperature for cooling to the room temperature. To thus prepared GaP substrate, a large quantity of N2 can be effectively introduced whereby it becomes possible to produce a green luminescent GaP element of excellent characteristics.
COPYRIGHT: (C)1980,JPO&Japio
JP53150000A 1978-12-06 1978-12-06 Manufacturing method of semiconductor issuing device Expired JPS6019155B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53150000A JPS6019155B2 (en) 1978-12-06 1978-12-06 Manufacturing method of semiconductor issuing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53150000A JPS6019155B2 (en) 1978-12-06 1978-12-06 Manufacturing method of semiconductor issuing device

Publications (2)

Publication Number Publication Date
JPS5577185A true JPS5577185A (en) 1980-06-10
JPS6019155B2 JPS6019155B2 (en) 1985-05-14

Family

ID=15487268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53150000A Expired JPS6019155B2 (en) 1978-12-06 1978-12-06 Manufacturing method of semiconductor issuing device

Country Status (1)

Country Link
JP (1) JPS6019155B2 (en)

Also Published As

Publication number Publication date
JPS6019155B2 (en) 1985-05-14

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