JPS54107669A - Semiconductor crystal growing unit - Google Patents

Semiconductor crystal growing unit

Info

Publication number
JPS54107669A
JPS54107669A JP1448478A JP1448478A JPS54107669A JP S54107669 A JPS54107669 A JP S54107669A JP 1448478 A JP1448478 A JP 1448478A JP 1448478 A JP1448478 A JP 1448478A JP S54107669 A JPS54107669 A JP S54107669A
Authority
JP
Japan
Prior art keywords
gaas
region
substrate
temperature
ascl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1448478A
Other languages
Japanese (ja)
Inventor
Michihiro Ito
Mutsuyuki Otsubo
Kazuaki Segawa
Takao Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1448478A priority Critical patent/JPS54107669A/en
Publication of JPS54107669A publication Critical patent/JPS54107669A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform epitaxial forming with good reproducibility, by providing the third temperature region between the high temperature first region placing raw material and the low temperature second region placing the substrate, and by reducing the variation of the ratio of component of gas fed toward the substrate.
CONSTITUTION: Taking the temperature of the region placing raw material 3 as T1≈850°C, the substrate 4 placing region as T2≈720°C, and the third region of the barrier 9 as T3=770 to 730°C at which GaAs crystal starts to separate from GaAs gas. First, only H2 is introduced 6 and heated 8, and after the temperature distribution is stable, when H2 including AsCl3 is introduced, GaAs is grown on the substrate 4. GaAs gas caused with the raw material 3 and AsCl3 is separated on the barrier 9 if it is in excess of the balanced value at T3, and if less, the GaAs separated on the barrier reacts with AsCl3 and reaches equilibrium. Thus, the ratio of component of GaAs gas flowing to the substrate 4 can be made constant and excellent epitaxial growing can be made with good reproducibility.
COPYRIGHT: (C)1979,JPO&Japio
JP1448478A 1978-02-10 1978-02-10 Semiconductor crystal growing unit Pending JPS54107669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1448478A JPS54107669A (en) 1978-02-10 1978-02-10 Semiconductor crystal growing unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1448478A JPS54107669A (en) 1978-02-10 1978-02-10 Semiconductor crystal growing unit

Publications (1)

Publication Number Publication Date
JPS54107669A true JPS54107669A (en) 1979-08-23

Family

ID=11862319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1448478A Pending JPS54107669A (en) 1978-02-10 1978-02-10 Semiconductor crystal growing unit

Country Status (1)

Country Link
JP (1) JPS54107669A (en)

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