JPS54107669A - Semiconductor crystal growing unit - Google Patents
Semiconductor crystal growing unitInfo
- Publication number
- JPS54107669A JPS54107669A JP1448478A JP1448478A JPS54107669A JP S54107669 A JPS54107669 A JP S54107669A JP 1448478 A JP1448478 A JP 1448478A JP 1448478 A JP1448478 A JP 1448478A JP S54107669 A JPS54107669 A JP S54107669A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- region
- substrate
- temperature
- ascl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To perform epitaxial forming with good reproducibility, by providing the third temperature region between the high temperature first region placing raw material and the low temperature second region placing the substrate, and by reducing the variation of the ratio of component of gas fed toward the substrate.
CONSTITUTION: Taking the temperature of the region placing raw material 3 as T1≈850°C, the substrate 4 placing region as T2≈720°C, and the third region of the barrier 9 as T3=770 to 730°C at which GaAs crystal starts to separate from GaAs gas. First, only H2 is introduced 6 and heated 8, and after the temperature distribution is stable, when H2 including AsCl3 is introduced, GaAs is grown on the substrate 4. GaAs gas caused with the raw material 3 and AsCl3 is separated on the barrier 9 if it is in excess of the balanced value at T3, and if less, the GaAs separated on the barrier reacts with AsCl3 and reaches equilibrium. Thus, the ratio of component of GaAs gas flowing to the substrate 4 can be made constant and excellent epitaxial growing can be made with good reproducibility.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1448478A JPS54107669A (en) | 1978-02-10 | 1978-02-10 | Semiconductor crystal growing unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1448478A JPS54107669A (en) | 1978-02-10 | 1978-02-10 | Semiconductor crystal growing unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54107669A true JPS54107669A (en) | 1979-08-23 |
Family
ID=11862319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1448478A Pending JPS54107669A (en) | 1978-02-10 | 1978-02-10 | Semiconductor crystal growing unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107669A (en) |
-
1978
- 1978-02-10 JP JP1448478A patent/JPS54107669A/en active Pending
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