JPS551126A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS551126A JPS551126A JP7375878A JP7375878A JPS551126A JP S551126 A JPS551126 A JP S551126A JP 7375878 A JP7375878 A JP 7375878A JP 7375878 A JP7375878 A JP 7375878A JP S551126 A JPS551126 A JP S551126A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recess
- sio
- layer
- epilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 238000000926 separation method Methods 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7375878A JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7375878A JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS551126A true JPS551126A (en) | 1980-01-07 |
| JPS6241418B2 JPS6241418B2 (https=) | 1987-09-02 |
Family
ID=13527445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7375878A Granted JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS551126A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57205731A (en) * | 1981-06-12 | 1982-12-16 | Konishiroku Photo Ind Co Ltd | Winder for photographic paper |
| JPS63297040A (ja) * | 1987-05-29 | 1988-12-05 | Process Rabo Micron:Kk | スクリ−ン印刷用ps版の製造方法及び装置 |
-
1978
- 1978-06-20 JP JP7375878A patent/JPS551126A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57205731A (en) * | 1981-06-12 | 1982-12-16 | Konishiroku Photo Ind Co Ltd | Winder for photographic paper |
| JPS63297040A (ja) * | 1987-05-29 | 1988-12-05 | Process Rabo Micron:Kk | スクリ−ン印刷用ps版の製造方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6241418B2 (https=) | 1987-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57204133A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5693341A (en) | Manufacture of bipolar ic | |
| JPS54589A (en) | Burying method of insulator | |
| JPS551126A (en) | Manufacture of semiconductor device | |
| JPS53135263A (en) | Production of semiconductor device | |
| JPS54154272A (en) | Contact forming method for semiconductor device | |
| DE3683054D1 (de) | Verfahren zum herstellen einer monolithisch integrierten schaltung mit mindestens einem bipolaren planartransistor. | |
| JPS54149465A (en) | Production of semiconductor device | |
| JPS5624937A (en) | Manufacture of semiconductor device | |
| JPS54116884A (en) | Semiconductor device | |
| JPS6430244A (en) | Manufacture of semiconductor device | |
| JPS6411343A (en) | Manufacture of semiconductor device | |
| JPS57187941A (en) | Manufacture of semiconductor substrate | |
| JPS553686A (en) | Preparation of semiconductor device | |
| JPS54158889A (en) | Manufacture of semiconductor device | |
| JPS51117885A (en) | Semiconductor device manufacturing method | |
| JPS5575235A (en) | Method of fabricating semiconductor device | |
| JPS57128063A (en) | Semiconductor device and manufacture thereof | |
| JPS57184231A (en) | Manufacture of semiconductor device | |
| JPS57173956A (en) | Manufacture of semiconductor device | |
| JPS53144687A (en) | Production of semiconductor device | |
| JPS5373086A (en) | Formation of multilayer wiring structure | |
| JPS55115330A (en) | Manufacturing method of semiconductor device | |
| JPS54134580A (en) | Production of semiconductor integrated circuit device | |
| JPS55115337A (en) | Manufacture of semiconductor device |