JPS6241418B2 - - Google Patents
Info
- Publication number
- JPS6241418B2 JPS6241418B2 JP7375878A JP7375878A JPS6241418B2 JP S6241418 B2 JPS6241418 B2 JP S6241418B2 JP 7375878 A JP7375878 A JP 7375878A JP 7375878 A JP7375878 A JP 7375878A JP S6241418 B2 JPS6241418 B2 JP S6241418B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- silicon nitride
- forming
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 claims 1
- 241000293849 Cordylanthus Species 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7375878A JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7375878A JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS551126A JPS551126A (en) | 1980-01-07 |
| JPS6241418B2 true JPS6241418B2 (https=) | 1987-09-02 |
Family
ID=13527445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7375878A Granted JPS551126A (en) | 1978-06-20 | 1978-06-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS551126A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57205731A (en) * | 1981-06-12 | 1982-12-16 | Konishiroku Photo Ind Co Ltd | Winder for photographic paper |
| JPS63297040A (ja) * | 1987-05-29 | 1988-12-05 | Process Rabo Micron:Kk | スクリ−ン印刷用ｐｓ版の製造方法及び装置 |
-
1978
- 1978-06-20 JP JP7375878A patent/JPS551126A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS551126A (en) | 1980-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH05152429A (ja) | 半導体装置の製造方法 | |
| JPH0693461B2 (ja) | 半導体デバイスの製造方法 | |
| JP2521611B2 (ja) | ツインウェルを有するｃｍｏｓの製造方法 | |
| JPS5836499B2 (ja) | ２層マスクを用いた半導体デバイスの製造方法 | |
| US5937310A (en) | Reduced bird's beak field oxidation process using nitrogen implanted into active region | |
| EP0068275B1 (en) | Method for producing semiconductor devices including the use of reactive ion etching | |
| EP0153686B1 (en) | Method for making transistor | |
| JPS6325947A (ja) | 半導体装置の製造方法 | |
| JPH0828424B2 (ja) | 半導体装置およびその製造方法 | |
| JPH04278534A (ja) | 半導体装置の素子分離方法 | |
| JPH0340938B2 (https=) | ||
| US5962914A (en) | Reduced bird's beak field oxidation process using nitrogen implanted into active region | |
| JPS6241418B2 (https=) | ||
| JPS60106142A (ja) | 半導体素子の製造方法 | |
| US4583282A (en) | Process for self-aligned buried layer, field guard, and isolation | |
| JPS63207177A (ja) | 半導体装置の製造方法 | |
| JPH0763072B2 (ja) | 半導体デバイスの分離方法 | |
| JPS58200554A (ja) | 半導体装置の製造方法 | |
| JPH065588A (ja) | 半導体装置の製造方法 | |
| EP0716442B1 (en) | Integrated circuit fabrication utilizing LOCOS process | |
| WO1991005365A1 (en) | A semiconductor device fabrication process | |
| JPH0258778B2 (https=) | ||
| JP2890550B2 (ja) | 半導体装置の製造方法 | |
| KR100192540B1 (ko) | 반도체 소자의 격리영역 형성방법 | |
| JP3142303B2 (ja) | 高速バイポーラトランジスタの製造方法 |