JPS55111171A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS55111171A
JPS55111171A JP1925879A JP1925879A JPS55111171A JP S55111171 A JPS55111171 A JP S55111171A JP 1925879 A JP1925879 A JP 1925879A JP 1925879 A JP1925879 A JP 1925879A JP S55111171 A JPS55111171 A JP S55111171A
Authority
JP
Japan
Prior art keywords
type
substrate
breakdown
impurity concentration
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1925879A
Other languages
English (en)
Inventor
Shinobu Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1925879A priority Critical patent/JPS55111171A/ja
Publication of JPS55111171A publication Critical patent/JPS55111171A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP1925879A 1979-02-20 1979-02-20 Field-effect semiconductor device Pending JPS55111171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1925879A JPS55111171A (en) 1979-02-20 1979-02-20 Field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1925879A JPS55111171A (en) 1979-02-20 1979-02-20 Field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS55111171A true JPS55111171A (en) 1980-08-27

Family

ID=11994399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1925879A Pending JPS55111171A (en) 1979-02-20 1979-02-20 Field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS55111171A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192359A (ja) * 1982-05-07 1983-11-09 Hitachi Ltd 半導体装置
JPS58218161A (ja) * 1982-06-14 1983-12-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS59114858A (ja) * 1982-12-21 1984-07-03 Nec Corp 絶縁ゲ−ト型電界効果半導体集積回路装置の製造方法
JPS6030169A (ja) * 1983-07-29 1985-02-15 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS60124964A (ja) * 1983-12-12 1985-07-04 Fujitsu Ltd 半導体装置の製造方法
US4660062A (en) * 1982-09-16 1987-04-21 Handotai Kenkyu Shinkokai Insulated gate transistor having reduced channel length
US5128739A (en) * 1983-12-07 1992-07-07 Fujitsu Limited MIS type semiconductor device formed in a semiconductor substrate having a well region

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192359A (ja) * 1982-05-07 1983-11-09 Hitachi Ltd 半導体装置
JPH0410227B2 (ja) * 1982-05-07 1992-02-24
JPS58218161A (ja) * 1982-06-14 1983-12-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4660062A (en) * 1982-09-16 1987-04-21 Handotai Kenkyu Shinkokai Insulated gate transistor having reduced channel length
JPS59114858A (ja) * 1982-12-21 1984-07-03 Nec Corp 絶縁ゲ−ト型電界効果半導体集積回路装置の製造方法
JPS6030169A (ja) * 1983-07-29 1985-02-15 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
US5128739A (en) * 1983-12-07 1992-07-07 Fujitsu Limited MIS type semiconductor device formed in a semiconductor substrate having a well region
JPS60124964A (ja) * 1983-12-12 1985-07-04 Fujitsu Ltd 半導体装置の製造方法

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