JPS55108773A - Insulating gate type field effect transistor - Google Patents
Insulating gate type field effect transistorInfo
- Publication number
- JPS55108773A JPS55108773A JP1665779A JP1665779A JPS55108773A JP S55108773 A JPS55108773 A JP S55108773A JP 1665779 A JP1665779 A JP 1665779A JP 1665779 A JP1665779 A JP 1665779A JP S55108773 A JPS55108773 A JP S55108773A
- Authority
- JP
- Japan
- Prior art keywords
- conductive type
- substrate
- region
- layer
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1665779A JPS55108773A (en) | 1979-02-14 | 1979-02-14 | Insulating gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1665779A JPS55108773A (en) | 1979-02-14 | 1979-02-14 | Insulating gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55108773A true JPS55108773A (en) | 1980-08-21 |
Family
ID=11922407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1665779A Pending JPS55108773A (en) | 1979-02-14 | 1979-02-14 | Insulating gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55108773A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60177677A (ja) * | 1984-02-23 | 1985-09-11 | Seiko Epson Corp | 半導体装置 |
US6404012B1 (en) | 1997-11-13 | 2002-06-11 | Nec Corporation | Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer |
WO2003017349A3 (de) * | 2001-08-17 | 2003-11-27 | Ihp Gmbh | Dmos-transistor |
-
1979
- 1979-02-14 JP JP1665779A patent/JPS55108773A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60177677A (ja) * | 1984-02-23 | 1985-09-11 | Seiko Epson Corp | 半導体装置 |
US6404012B1 (en) | 1997-11-13 | 2002-06-11 | Nec Corporation | Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer |
WO2003017349A3 (de) * | 2001-08-17 | 2003-11-27 | Ihp Gmbh | Dmos-transistor |
US7304348B2 (en) | 2001-08-17 | 2007-12-04 | Ihp Gmbh - Innovations For High Performance Microelectronics/Institut Fur Innovative Mikroelektronik | DMOS transistor |
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