JPS5494276A - Impurity diffusing apparatus for semiconductor - Google Patents

Impurity diffusing apparatus for semiconductor

Info

Publication number
JPS5494276A
JPS5494276A JP88678A JP88678A JPS5494276A JP S5494276 A JPS5494276 A JP S5494276A JP 88678 A JP88678 A JP 88678A JP 88678 A JP88678 A JP 88678A JP S5494276 A JPS5494276 A JP S5494276A
Authority
JP
Japan
Prior art keywords
diffusion
vessel
substrates
semiconductor
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP88678A
Other languages
Japanese (ja)
Inventor
Yoshimasa Kobayashi
Masaaki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP88678A priority Critical patent/JPS5494276A/en
Publication of JPS5494276A publication Critical patent/JPS5494276A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To reduce the variations of diffusion by disposing the vapor diffusion ports of the conduit of a crucible containing diffusion source material non-opposedly to substrates.
CONSTITUTION: A crucible 14 containing diffusion source material 5 assumes T- form and both opening ends b', b" of the horizontal pipe 14b oppose to the inside wall of a sealed tube vessel 1. When the vessel is loaded in this state into a heating furnace 6, the material 5 does not directly fly to Si substrates 3, 3'... and are diffused through vapor diffusion and distribution in the vessel 1, thus even diffusion is accomplished on each substrate. Hence, the need for dummy substrates is eliminated.
COPYRIGHT: (C)1979,JPO&Japio
JP88678A 1978-01-10 1978-01-10 Impurity diffusing apparatus for semiconductor Pending JPS5494276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP88678A JPS5494276A (en) 1978-01-10 1978-01-10 Impurity diffusing apparatus for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP88678A JPS5494276A (en) 1978-01-10 1978-01-10 Impurity diffusing apparatus for semiconductor

Publications (1)

Publication Number Publication Date
JPS5494276A true JPS5494276A (en) 1979-07-25

Family

ID=11486148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP88678A Pending JPS5494276A (en) 1978-01-10 1978-01-10 Impurity diffusing apparatus for semiconductor

Country Status (1)

Country Link
JP (1) JPS5494276A (en)

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