JPS54156470A - Gas phase diffusion method - Google Patents

Gas phase diffusion method

Info

Publication number
JPS54156470A
JPS54156470A JP6531778A JP6531778A JPS54156470A JP S54156470 A JPS54156470 A JP S54156470A JP 6531778 A JP6531778 A JP 6531778A JP 6531778 A JP6531778 A JP 6531778A JP S54156470 A JPS54156470 A JP S54156470A
Authority
JP
Japan
Prior art keywords
carrier gas
gas phase
phase diffusion
impurity concentration
diffusion method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6531778A
Other languages
Japanese (ja)
Inventor
Masami Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6531778A priority Critical patent/JPS54156470A/en
Publication of JPS54156470A publication Critical patent/JPS54156470A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make average the difference in impurity concentration in the carrier gas toward the tube axis of diffusion furnace and to perform uniform gas phase diffusion, by alternately selecting the direction of introduction of carrier gas.
CONSTITUTION: The flow path of the impurity doping source 10 and the discharge system 11 is selected every given time by operating the valve 9 and the carrier gas is alternately introduced to the semiconductor substrate 3 from the both directions, then since the impurity concentration distribution is synthesized to constitute almost flat distribution and all the substrates are uniformly diffused.
COPYRIGHT: (C)1979,JPO&Japio
JP6531778A 1978-05-30 1978-05-30 Gas phase diffusion method Pending JPS54156470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6531778A JPS54156470A (en) 1978-05-30 1978-05-30 Gas phase diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6531778A JPS54156470A (en) 1978-05-30 1978-05-30 Gas phase diffusion method

Publications (1)

Publication Number Publication Date
JPS54156470A true JPS54156470A (en) 1979-12-10

Family

ID=13283404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6531778A Pending JPS54156470A (en) 1978-05-30 1978-05-30 Gas phase diffusion method

Country Status (1)

Country Link
JP (1) JPS54156470A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011152510A1 (en) * 2010-06-04 2011-12-08 信越化学工業株式会社 Heat-treatment furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011152510A1 (en) * 2010-06-04 2011-12-08 信越化学工業株式会社 Heat-treatment furnace
JP2012015501A (en) * 2010-06-04 2012-01-19 Shin Etsu Chem Co Ltd Heat treatment furnace

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