JPS5484900A - Vapor phase growth method of magnesia spinel - Google Patents

Vapor phase growth method of magnesia spinel

Info

Publication number
JPS5484900A
JPS5484900A JP15163777A JP15163777A JPS5484900A JP S5484900 A JPS5484900 A JP S5484900A JP 15163777 A JP15163777 A JP 15163777A JP 15163777 A JP15163777 A JP 15163777A JP S5484900 A JPS5484900 A JP S5484900A
Authority
JP
Japan
Prior art keywords
gas
substrate
passage
vapor phase
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15163777A
Other languages
Japanese (ja)
Other versions
JPS5948791B2 (en
Inventor
Akira Osawa
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52151637A priority Critical patent/JPS5948791B2/en
Publication of JPS5484900A publication Critical patent/JPS5484900A/en
Publication of JPS5948791B2 publication Critical patent/JPS5948791B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To accomplish growth of the magnesia spinela in a vapor phase on a Si substrate better in chrystal characteristics of the growth layer by bringing Mg vapor into contact with the Si substrate 1 with a reaction gas between HCl gas and Al in the first passage and CO2 gas mixed together.
CONSTITUTION: A Si substrate 2 is heated with a high frequency heating furnace 3. Then, Al metal 6 in the first passage is heated with a resistance heater 8 and Mg metal 7 in the second passage with a resistance heater 9. Then, vapor phase matters in the second passage are sucked so as to leave the Si substrate 2 and delivered out of a purge line 16 so that the substrate 2 is protected from contamination by Mg. Then, H2 or an inert gas is made to flow toward the second passage through a valve 12 to drive the Mg vapor toward the substrate. At the same time, AlCl3 gas previously produced with HCl gas and H2 gas or inert carrier gas flowing through the first passage is mixed with CO2 gas from a CO2 supply source 20 and brought into contact with the substrate 2 to allow the spinel of (MgO)1-x. (Al2O3)x to grow.
COPYRIGHT: (C)1979,JPO&Japio
JP52151637A 1977-12-19 1977-12-19 Vapor phase growth method of magnesia spinel Expired JPS5948791B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52151637A JPS5948791B2 (en) 1977-12-19 1977-12-19 Vapor phase growth method of magnesia spinel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52151637A JPS5948791B2 (en) 1977-12-19 1977-12-19 Vapor phase growth method of magnesia spinel

Publications (2)

Publication Number Publication Date
JPS5484900A true JPS5484900A (en) 1979-07-06
JPS5948791B2 JPS5948791B2 (en) 1984-11-28

Family

ID=15522892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52151637A Expired JPS5948791B2 (en) 1977-12-19 1977-12-19 Vapor phase growth method of magnesia spinel

Country Status (1)

Country Link
JP (1) JPS5948791B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03169511A (en) * 1989-11-28 1991-07-23 Ikeuchi:Kk Automatic cleaning device for inner wall of mixer tank for production of ready mixed concrete

Also Published As

Publication number Publication date
JPS5948791B2 (en) 1984-11-28

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