JPS55154400A - Gas phase epitaxial growing method of magnesia spinel - Google Patents

Gas phase epitaxial growing method of magnesia spinel

Info

Publication number
JPS55154400A
JPS55154400A JP5865279A JP5865279A JPS55154400A JP S55154400 A JPS55154400 A JP S55154400A JP 5865279 A JP5865279 A JP 5865279A JP 5865279 A JP5865279 A JP 5865279A JP S55154400 A JPS55154400 A JP S55154400A
Authority
JP
Japan
Prior art keywords
zone
mgcl
growth
reaction tube
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5865279A
Other languages
Japanese (ja)
Other versions
JPS6146440B2 (en
Inventor
Masaru Ihara
Hideki Yamawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5865279A priority Critical patent/JPS55154400A/en
Publication of JPS55154400A publication Critical patent/JPS55154400A/en
Publication of JPS6146440B2 publication Critical patent/JPS6146440B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent MgCl2 from precipitation and to enhance the utilization efficiency by a method wherein, in case of subjecting MgO.Al2O3 to the epitaxial growth by using Al, HCl, MgCl2, CO2 and H2, a heater is contacted and provided to an outer cylindrical portion of a reaction tube of a growth zone and, moreover, the distance between a MgCl2 zone and a growth zone is shortened.
CONSTITUTION: Each source 6, 7 of Al and MgCl2 are arranged within a source chamber 11 and the vapor of MgCl2 and AlCl3 is supplied along with H2 and CO2 to grow MgO.Al2O3 onto a substrate plate 8 of a growth zone B by the gas phase epitaxial growth. In this case, a source zone A and a growth zone B are contacted and a heater 17 heated by high frequency induction is provided in contact with an outer cylindrical portion of a reaction tube 12 of a zone B to heat a reaction tube 12 to 750W950°C pref. Thereby, the precipitation of MgCl2 to an inner surface of a reaction tube 12 as well as the growth of MgO spinel are prevented. Moreover, a high frequency shield plate 18 is provided between a zone A and B to prevent the phenomena wherein the induction electric current from a high frequency heating furnace 10 imparts an external disturbance to a MgCl2 source zone.
COPYRIGHT: (C)1980,JPO&Japio
JP5865279A 1979-05-15 1979-05-15 Gas phase epitaxial growing method of magnesia spinel Granted JPS55154400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5865279A JPS55154400A (en) 1979-05-15 1979-05-15 Gas phase epitaxial growing method of magnesia spinel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5865279A JPS55154400A (en) 1979-05-15 1979-05-15 Gas phase epitaxial growing method of magnesia spinel

Publications (2)

Publication Number Publication Date
JPS55154400A true JPS55154400A (en) 1980-12-01
JPS6146440B2 JPS6146440B2 (en) 1986-10-14

Family

ID=13090508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5865279A Granted JPS55154400A (en) 1979-05-15 1979-05-15 Gas phase epitaxial growing method of magnesia spinel

Country Status (1)

Country Link
JP (1) JPS55154400A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409375A (en) * 2014-11-26 2015-03-11 上海新微技术研发中心有限公司 Bonding method and manufacturing method of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63127140A (en) * 1986-11-17 1988-05-31 Mitsubishi Kasei Corp Apparatus for sampling gas generated by coke oven

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409375A (en) * 2014-11-26 2015-03-11 上海新微技术研发中心有限公司 Bonding method and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS6146440B2 (en) 1986-10-14

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