JPS55154400A - Gas phase epitaxial growing method of magnesia spinel - Google Patents
Gas phase epitaxial growing method of magnesia spinelInfo
- Publication number
- JPS55154400A JPS55154400A JP5865279A JP5865279A JPS55154400A JP S55154400 A JPS55154400 A JP S55154400A JP 5865279 A JP5865279 A JP 5865279A JP 5865279 A JP5865279 A JP 5865279A JP S55154400 A JPS55154400 A JP S55154400A
- Authority
- JP
- Japan
- Prior art keywords
- zone
- mgcl
- growth
- reaction tube
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent MgCl2 from precipitation and to enhance the utilization efficiency by a method wherein, in case of subjecting MgO.Al2O3 to the epitaxial growth by using Al, HCl, MgCl2, CO2 and H2, a heater is contacted and provided to an outer cylindrical portion of a reaction tube of a growth zone and, moreover, the distance between a MgCl2 zone and a growth zone is shortened.
CONSTITUTION: Each source 6, 7 of Al and MgCl2 are arranged within a source chamber 11 and the vapor of MgCl2 and AlCl3 is supplied along with H2 and CO2 to grow MgO.Al2O3 onto a substrate plate 8 of a growth zone B by the gas phase epitaxial growth. In this case, a source zone A and a growth zone B are contacted and a heater 17 heated by high frequency induction is provided in contact with an outer cylindrical portion of a reaction tube 12 of a zone B to heat a reaction tube 12 to 750W950°C pref. Thereby, the precipitation of MgCl2 to an inner surface of a reaction tube 12 as well as the growth of MgO spinel are prevented. Moreover, a high frequency shield plate 18 is provided between a zone A and B to prevent the phenomena wherein the induction electric current from a high frequency heating furnace 10 imparts an external disturbance to a MgCl2 source zone.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5865279A JPS55154400A (en) | 1979-05-15 | 1979-05-15 | Gas phase epitaxial growing method of magnesia spinel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5865279A JPS55154400A (en) | 1979-05-15 | 1979-05-15 | Gas phase epitaxial growing method of magnesia spinel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55154400A true JPS55154400A (en) | 1980-12-01 |
JPS6146440B2 JPS6146440B2 (en) | 1986-10-14 |
Family
ID=13090508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5865279A Granted JPS55154400A (en) | 1979-05-15 | 1979-05-15 | Gas phase epitaxial growing method of magnesia spinel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55154400A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409375A (en) * | 2014-11-26 | 2015-03-11 | 上海新微技术研发中心有限公司 | Bonding method and manufacturing method of semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63127140A (en) * | 1986-11-17 | 1988-05-31 | Mitsubishi Kasei Corp | Apparatus for sampling gas generated by coke oven |
-
1979
- 1979-05-15 JP JP5865279A patent/JPS55154400A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409375A (en) * | 2014-11-26 | 2015-03-11 | 上海新微技术研发中心有限公司 | Bonding method and manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6146440B2 (en) | 1986-10-14 |
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