JPS5482166A - Liquid-phase grow device for semiconductor - Google Patents

Liquid-phase grow device for semiconductor

Info

Publication number
JPS5482166A
JPS5482166A JP14929177A JP14929177A JPS5482166A JP S5482166 A JPS5482166 A JP S5482166A JP 14929177 A JP14929177 A JP 14929177A JP 14929177 A JP14929177 A JP 14929177A JP S5482166 A JPS5482166 A JP S5482166A
Authority
JP
Japan
Prior art keywords
plate
solution
tank
storage part
substrate storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14929177A
Other languages
Japanese (ja)
Inventor
Haruaki Umetsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14929177A priority Critical patent/JPS5482166A/en
Publication of JPS5482166A publication Critical patent/JPS5482166A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To prevent the solution from moving toward the substrate storage part even with some bending of the patition plate caused by a large amount of the solution, by providing small holes to the bottom of the solution tank as well as to the moving plate.
CONSTITUTION: Solution tank 4 is provided at the upper part of substrate storage part 1, and crystal solution 5 is flowed into tank 4. Moving plate 6 is put close onto the bottom of tank 4, and small hole 7 and 8 are provided to the bottom of tank 4 and plate 6. Then plate 6 is moved with operation of rod 9 to make the holes coincide to each other, thus slution 5 being flowed to the substrate storage part. Moving plate 10 under the substrate storage part is operated with rod 12 to make small hole 14 of plate 10 coincide with small hole 13 of the bottom plate at the substrate storage part, and thus the solution flows out to tank 11. Both tnak 4 and plate 6 bend together, so no gap is caused with no touch of solution 5 to the substrate before operation of the moving plate. As a result, the growth layer can be obtained with an optional thickness.
COPYRIGHT: (C)1979,JPO&Japio
JP14929177A 1977-12-14 1977-12-14 Liquid-phase grow device for semiconductor Pending JPS5482166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14929177A JPS5482166A (en) 1977-12-14 1977-12-14 Liquid-phase grow device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14929177A JPS5482166A (en) 1977-12-14 1977-12-14 Liquid-phase grow device for semiconductor

Publications (1)

Publication Number Publication Date
JPS5482166A true JPS5482166A (en) 1979-06-30

Family

ID=15471960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14929177A Pending JPS5482166A (en) 1977-12-14 1977-12-14 Liquid-phase grow device for semiconductor

Country Status (1)

Country Link
JP (1) JPS5482166A (en)

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