JPS53142170A - Defect analysis method for semiconductor - Google Patents

Defect analysis method for semiconductor

Info

Publication number
JPS53142170A
JPS53142170A JP5726777A JP5726777A JPS53142170A JP S53142170 A JPS53142170 A JP S53142170A JP 5726777 A JP5726777 A JP 5726777A JP 5726777 A JP5726777 A JP 5726777A JP S53142170 A JPS53142170 A JP S53142170A
Authority
JP
Japan
Prior art keywords
semiconductor
defect analysis
analysis method
liquid crystal
utilizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5726777A
Other languages
Japanese (ja)
Inventor
Sunao Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5726777A priority Critical patent/JPS53142170A/en
Publication of JPS53142170A publication Critical patent/JPS53142170A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To carry out the defect analysis for the semiconductor by changing continuously the liquid crystal from a large to small thickness and then utilizing the dynamic dispersion effect of the liquid crystal.
COPYRIGHT: (C)1978,JPO&Japio
JP5726777A 1977-05-17 1977-05-17 Defect analysis method for semiconductor Pending JPS53142170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5726777A JPS53142170A (en) 1977-05-17 1977-05-17 Defect analysis method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5726777A JPS53142170A (en) 1977-05-17 1977-05-17 Defect analysis method for semiconductor

Publications (1)

Publication Number Publication Date
JPS53142170A true JPS53142170A (en) 1978-12-11

Family

ID=13050745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5726777A Pending JPS53142170A (en) 1977-05-17 1977-05-17 Defect analysis method for semiconductor

Country Status (1)

Country Link
JP (1) JPS53142170A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504017A (en) * 1994-12-20 1996-04-02 Advanced Micro Devices, Inc. Void detection in metallization patterns

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504017A (en) * 1994-12-20 1996-04-02 Advanced Micro Devices, Inc. Void detection in metallization patterns

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