JPS5475281A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5475281A
JPS5475281A JP14319177A JP14319177A JPS5475281A JP S5475281 A JPS5475281 A JP S5475281A JP 14319177 A JP14319177 A JP 14319177A JP 14319177 A JP14319177 A JP 14319177A JP S5475281 A JPS5475281 A JP S5475281A
Authority
JP
Japan
Prior art keywords
region
channel
channel width
width
mutual conductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14319177A
Other languages
Japanese (ja)
Other versions
JPS6146985B2 (en
Inventor
Nobuo Sasaki
Motoo Nakano
Yasuo Kobayashi
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14319177A priority Critical patent/JPS5475281A/en
Publication of JPS5475281A publication Critical patent/JPS5475281A/en
Publication of JPS6146985B2 publication Critical patent/JPS6146985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

PURPOSE:To obtain SOS.MIS.FET which features a small amount of the leak current inspite of a large amount of the mutual conductance, by narrowing the channel width of the PN junction formed with the drain region and the channel region and also widening the channel width of other areas. CONSTITUTION:Source region S and drain region D are formed on the semiconductor substrate, and then channel region C is grown between region S and D. In this case, channel width W is narrowed near the PN junction, and width W' of region C is set to several times as large as W. As a result, the leak current flowing between the source and drain regions through the area around the island is decreased because of the long path. At the same time, the mutual conductance is increased greatly, thus increasing the current amplification factor. Accordingly, this method becomes very effective when the substrate featuring rather inferior crystalline property is used.
JP14319177A 1977-11-29 1977-11-29 Semiconductor device Granted JPS5475281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14319177A JPS5475281A (en) 1977-11-29 1977-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14319177A JPS5475281A (en) 1977-11-29 1977-11-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5475281A true JPS5475281A (en) 1979-06-15
JPS6146985B2 JPS6146985B2 (en) 1986-10-16

Family

ID=15332979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14319177A Granted JPS5475281A (en) 1977-11-29 1977-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5475281A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168341A (en) * 2012-02-17 2013-08-29 Seiko Epson Corp Organic el device and electronic apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168341A (en) * 2012-02-17 2013-08-29 Seiko Epson Corp Organic el device and electronic apparatus

Also Published As

Publication number Publication date
JPS6146985B2 (en) 1986-10-16

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