JPS5465485A - Source-drain diffusion method for complementary mos-ic - Google Patents
Source-drain diffusion method for complementary mos-icInfo
- Publication number
- JPS5465485A JPS5465485A JP13193077A JP13193077A JPS5465485A JP S5465485 A JPS5465485 A JP S5465485A JP 13193077 A JP13193077 A JP 13193077A JP 13193077 A JP13193077 A JP 13193077A JP S5465485 A JPS5465485 A JP S5465485A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain diffusion
- diffusion
- type
- diffusion method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13193077A JPS5465485A (en) | 1977-11-02 | 1977-11-02 | Source-drain diffusion method for complementary mos-ic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13193077A JPS5465485A (en) | 1977-11-02 | 1977-11-02 | Source-drain diffusion method for complementary mos-ic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5465485A true JPS5465485A (en) | 1979-05-26 |
Family
ID=15069522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13193077A Pending JPS5465485A (en) | 1977-11-02 | 1977-11-02 | Source-drain diffusion method for complementary mos-ic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5465485A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6353970A (ja) * | 1986-08-22 | 1988-03-08 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
| JPH0737994A (ja) * | 1993-07-24 | 1995-02-07 | Nec Corp | 半導体装置の製造方法 |
-
1977
- 1977-11-02 JP JP13193077A patent/JPS5465485A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6353970A (ja) * | 1986-08-22 | 1988-03-08 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
| JPH0737994A (ja) * | 1993-07-24 | 1995-02-07 | Nec Corp | 半導体装置の製造方法 |
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