JPS5463683A - Production of pn junction field effect transistor - Google Patents
Production of pn junction field effect transistorInfo
- Publication number
- JPS5463683A JPS5463683A JP12962177A JP12962177A JPS5463683A JP S5463683 A JPS5463683 A JP S5463683A JP 12962177 A JP12962177 A JP 12962177A JP 12962177 A JP12962177 A JP 12962177A JP S5463683 A JPS5463683 A JP S5463683A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- substrate
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 108091006146 Channels Proteins 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12962177A JPS5463683A (en) | 1977-10-31 | 1977-10-31 | Production of pn junction field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12962177A JPS5463683A (en) | 1977-10-31 | 1977-10-31 | Production of pn junction field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5463683A true JPS5463683A (en) | 1979-05-22 |
| JPS6136390B2 JPS6136390B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Family
ID=15013992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12962177A Granted JPS5463683A (en) | 1977-10-31 | 1977-10-31 | Production of pn junction field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5463683A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60226164A (ja) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS60226165A (ja) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS60229361A (ja) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS60229362A (ja) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS6112057A (ja) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | 半導体装置 |
-
1977
- 1977-10-31 JP JP12962177A patent/JPS5463683A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60226164A (ja) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS60226165A (ja) * | 1984-04-25 | 1985-11-11 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS60229361A (ja) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS60229362A (ja) * | 1984-04-26 | 1985-11-14 | Sanyo Electric Co Ltd | 半導体注入集積論理回路装置 |
| JPS6112057A (ja) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136390B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1046152A (en) | Diode structure in semiconductor integrated circuit and method of making same | |
| GB988902A (en) | Semiconductor devices and methods of making same | |
| JPS54112179A (en) | Semiconductor device | |
| JPS5463683A (en) | Production of pn junction field effect transistor | |
| JPS645070A (en) | Vertical insulated gate field effect transistor | |
| JPS55165669A (en) | Bipolar-mos device | |
| JPS55111171A (en) | Field-effect semiconductor device | |
| JPS5582461A (en) | Semiconductor integrated circuit device | |
| JPS5596675A (en) | Semiconductor device | |
| JPS5778171A (en) | Thyristor | |
| JPS5619653A (en) | Bipolar cmos semiconductor device and manufacture thereof | |
| JPS5568678A (en) | Junction type field effect transistor | |
| JPS5588378A (en) | Semiconductor device | |
| JPS56108255A (en) | Semiconductor integrated circuit | |
| JPS5615068A (en) | Semiconductor device and manufacture thereof | |
| JPS5687360A (en) | Transistor device | |
| KR940001257B1 (ko) | 반도체 소자 제조방법 | |
| JPS554973A (en) | Lateral injection type transistor | |
| JPS55107261A (en) | Semiconductor integrated circuit device | |
| JPS5533007A (en) | Semiconductor intergated circuit | |
| JPS55145364A (en) | Semiconductor integrated circuit device | |
| JPS5615066A (en) | Electrostatic induction type semiconductor logic circuit device | |
| JPS54113269A (en) | Production of junction-type electronic field effect transistor | |
| JPS5787168A (en) | Semiconductor device | |
| FR2457564A1 (fr) | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |