JPS5454577A - Material working method with photo resist - Google Patents
Material working method with photo resistInfo
- Publication number
- JPS5454577A JPS5454577A JP12093777A JP12093777A JPS5454577A JP S5454577 A JPS5454577 A JP S5454577A JP 12093777 A JP12093777 A JP 12093777A JP 12093777 A JP12093777 A JP 12093777A JP S5454577 A JPS5454577 A JP S5454577A
- Authority
- JP
- Japan
- Prior art keywords
- working
- film
- mask
- etched
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To perform fine working by softening the photo resist film having been made in eaves form to allow the same to be contacted to the material being worked and working the material being worked at least twice in a self-alignment manner.
CONSTITUTION: An oxide film 2, phosphorus-doped poly-Si 3 and an oxide thin film 4 are laminated on a p type Si substrate 1 and a resist mask 5 is made. When etching is performed by keeping a NH2F/HF solution of 6:1 at 20°C, then side etching size and variations in shape may be made sufficiently small and the fil m 4 is etched. Following to this, the substrate is treated for 10 minutes at 140°C to soften the resist 5, after which the film 3 is plasma-etched to remove the mask 5. Next, n+ layers 6-1, 6-2 are provided by implanting As and the film 3 is plasma- etched through the mask 4, after which As is driven to provide n layers 7-1, 7-2, whereby a MOSFET is created. Then, working more than twice in a self-alignment manner becomes possible with one kind of mask and fine working may be formed with good controllability of working and working shape
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12093777A JPS5454577A (en) | 1977-10-11 | 1977-10-11 | Material working method with photo resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12093777A JPS5454577A (en) | 1977-10-11 | 1977-10-11 | Material working method with photo resist |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5454577A true JPS5454577A (en) | 1979-04-28 |
JPS6238852B2 JPS6238852B2 (en) | 1987-08-20 |
Family
ID=14798649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12093777A Granted JPS5454577A (en) | 1977-10-11 | 1977-10-11 | Material working method with photo resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5454577A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818715A (en) * | 1987-07-09 | 1989-04-04 | Industrial Technology Research Institute | Method of fabricating a LDDFET with self-aligned silicide |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134579A (en) * | 1974-04-13 | 1975-10-24 | ||
JPS5235980A (en) * | 1975-09-16 | 1977-03-18 | Hitachi Ltd | Manufacturing method of semiconductor device |
-
1977
- 1977-10-11 JP JP12093777A patent/JPS5454577A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134579A (en) * | 1974-04-13 | 1975-10-24 | ||
JPS5235980A (en) * | 1975-09-16 | 1977-03-18 | Hitachi Ltd | Manufacturing method of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818715A (en) * | 1987-07-09 | 1989-04-04 | Industrial Technology Research Institute | Method of fabricating a LDDFET with self-aligned silicide |
Also Published As
Publication number | Publication date |
---|---|
JPS6238852B2 (en) | 1987-08-20 |
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