JPS5449076A - Manufacture of schottky barrier diode - Google Patents

Manufacture of schottky barrier diode

Info

Publication number
JPS5449076A
JPS5449076A JP11584177A JP11584177A JPS5449076A JP S5449076 A JPS5449076 A JP S5449076A JP 11584177 A JP11584177 A JP 11584177A JP 11584177 A JP11584177 A JP 11584177A JP S5449076 A JPS5449076 A JP S5449076A
Authority
JP
Japan
Prior art keywords
schottky barrier
manufacture
barrier diode
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11584177A
Other languages
Japanese (ja)
Inventor
Yoichi Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11584177A priority Critical patent/JPS5449076A/en
Publication of JPS5449076A publication Critical patent/JPS5449076A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To manufacture a Schottky barrier diode with a small parasitic capacity of a metal electrode via a SiO2 film.
CONSTITUTION: Onto Si substrate 3, Si3N46 as large as the Schottky barrier SB diameter is provided, and heat-oxidized after being processed in a HF solution into porous, thereby forming layer 7. Film 6 is removed, and SB metal 8 is provided covering the exposed part, so that a SB diode with the desired diameter can be formed. The thickness of layer 7 can be adjusted to a needed value while substrate 5 is made porous, so that the parasitic capacity through layer 7 can be made small sufficiently
COPYRIGHT: (C)1979,JPO&Japio
JP11584177A 1977-09-26 1977-09-26 Manufacture of schottky barrier diode Pending JPS5449076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11584177A JPS5449076A (en) 1977-09-26 1977-09-26 Manufacture of schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11584177A JPS5449076A (en) 1977-09-26 1977-09-26 Manufacture of schottky barrier diode

Publications (1)

Publication Number Publication Date
JPS5449076A true JPS5449076A (en) 1979-04-18

Family

ID=14672439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11584177A Pending JPS5449076A (en) 1977-09-26 1977-09-26 Manufacture of schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS5449076A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2262186A (en) * 1991-12-04 1993-06-09 Philips Electronic Associated A capacitive structure for a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2262186A (en) * 1991-12-04 1993-06-09 Philips Electronic Associated A capacitive structure for a semiconductor device

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