JPS5511318A - Semiconductor peleet - Google Patents

Semiconductor peleet

Info

Publication number
JPS5511318A
JPS5511318A JP8304578A JP8304578A JPS5511318A JP S5511318 A JPS5511318 A JP S5511318A JP 8304578 A JP8304578 A JP 8304578A JP 8304578 A JP8304578 A JP 8304578A JP S5511318 A JPS5511318 A JP S5511318A
Authority
JP
Japan
Prior art keywords
electrode
base
layer
film coating
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8304578A
Other languages
Japanese (ja)
Inventor
Mitsusachi Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8304578A priority Critical patent/JPS5511318A/en
Publication of JPS5511318A publication Critical patent/JPS5511318A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To provide semiconductor pellet for heatsink type semiconductor device, having a highly economical and efficient electrode structure, by forming a two- layer electrode structure consisting of metal film covering and metal piece.
CONSTITUTION: Collector layer 21, base layer 22 and emitter layer 23 are formed on a semiconductor base by the selective diffusion method, for example. A hole for forming an electrode is provided on SiO2 film coating 24. Emitter electrode film coating 32 and base electrode film coating 34 are formed by evaporating Cr-Ni-Ag, for example. Next, window-fitted emitter electrode piece 41 base electrode piece 51 of proper size and shape are fixed to electrode film coatings 32 and 33 by using Pb-Sn-Ag solder, for example. By this, the thickness of electrode pieces can be selected freely, and at the same time, efficient electrodes can be formed. Consequently, it is possible to provide a sufficient thickness so as to prevent electric discharge.
COPYRIGHT: (C)1980,JPO&Japio
JP8304578A 1978-07-10 1978-07-10 Semiconductor peleet Pending JPS5511318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8304578A JPS5511318A (en) 1978-07-10 1978-07-10 Semiconductor peleet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8304578A JPS5511318A (en) 1978-07-10 1978-07-10 Semiconductor peleet

Publications (1)

Publication Number Publication Date
JPS5511318A true JPS5511318A (en) 1980-01-26

Family

ID=13791222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8304578A Pending JPS5511318A (en) 1978-07-10 1978-07-10 Semiconductor peleet

Country Status (1)

Country Link
JP (1) JPS5511318A (en)

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