JPS5421278A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5421278A
JPS5421278A JP8686577A JP8686577A JPS5421278A JP S5421278 A JPS5421278 A JP S5421278A JP 8686577 A JP8686577 A JP 8686577A JP 8686577 A JP8686577 A JP 8686577A JP S5421278 A JPS5421278 A JP S5421278A
Authority
JP
Japan
Prior art keywords
plasma etching
etching method
etching
speed
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8686577A
Other languages
English (en)
Inventor
Masahiko Yasuoka
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8686577A priority Critical patent/JPS5421278A/ja
Publication of JPS5421278A publication Critical patent/JPS5421278A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP8686577A 1977-07-19 1977-07-19 Plasma etching method Pending JPS5421278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8686577A JPS5421278A (en) 1977-07-19 1977-07-19 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8686577A JPS5421278A (en) 1977-07-19 1977-07-19 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5421278A true JPS5421278A (en) 1979-02-17

Family

ID=13898701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8686577A Pending JPS5421278A (en) 1977-07-19 1977-07-19 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5421278A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166925A (en) * 1979-06-13 1980-12-26 Matsushita Electronics Corp Application of metal film on semiconductor substrate
JPS6184835A (ja) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd アルミニウムおよびアルミニウム―シリコン合金の反応性イオンエッチング方法
JP2005310960A (ja) * 2004-04-20 2005-11-04 Matsushita Electric Ind Co Ltd 金属膜のパターン形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166925A (en) * 1979-06-13 1980-12-26 Matsushita Electronics Corp Application of metal film on semiconductor substrate
JPS6184835A (ja) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd アルミニウムおよびアルミニウム―シリコン合金の反応性イオンエッチング方法
JP2005310960A (ja) * 2004-04-20 2005-11-04 Matsushita Electric Ind Co Ltd 金属膜のパターン形成方法
JP4620964B2 (ja) * 2004-04-20 2011-01-26 パナソニック株式会社 金属膜のパターン形成方法

Similar Documents

Publication Publication Date Title
JPS5378170A (en) Continuous processor for gas plasma etching
JPS5421278A (en) Plasma etching method
JPS52123173A (en) Sputter etching method
JPS52127762A (en) Etching method
JPS5326674A (en) Plasma etching
JPS51136289A (en) Semi-conductor producing
JPS5432985A (en) Flattening method for substrate surface with protrusion
JPS53116077A (en) Etching method
JPS5287985A (en) Plasma etching method
JPS5414165A (en) Selective oxidation method for semiconductor substrate
JPS52104066A (en) Selective etching method of thermosetting organic materials
JPS51131269A (en) Vapor phase propagation process and vapor phase propagation unit
JPS5321573A (en) Etching method
JPS5359368A (en) Plasma etching
JPS5213778A (en) Plasma-etching method
JPS542670A (en) Plasma etching method
JPS5325366A (en) Plasma treating method and apparat us
JPS5382174A (en) Surface processing method for semiconductor device
JPS53102846A (en) Etching method
JPS52131466A (en) Plasma etching method
JPS5421279A (en) Plasma etching method
JPS545386A (en) Surface processor for wafer
JPS5436184A (en) Etching method of gaas compound semiconductor crystal
JPS5368070A (en) Etching method
JPS5315765A (en) Vacuum caontact prevention method of hard mask